NAND04GW3C2AN1E中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

Summary description

The NAND04GA3C2A and NAND04GW3C2A are a Multi-level Cell(MLC) devices from the NAND Flash 2112 Byte Page family of non-volatile Flash memories. The devices are offered in 1.8V and 3V VDDQ I/O power supplies. The core voltage is 3V VDD. The size of a Page is 2112 Bytes (2048 + 64 spare).

Features

■ High density multi-level Cell (MLC) NAND Flash memories:

– Up to 128 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND interface

– x8 bus width

– Multiplexed Address/ Data

■ Supply voltages

– VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations.

– VDDQ = 1.7 to 1.95 or 2.7 to 3.6V for I/O buffers.

■ Page size: (2048 + 64 spare) Bytes

■ Block size: (256K + 8K spare) Bytes

■ Page Read/Program

– Random access: 60μs (max)

– Sequential access: 60ns(min)

– Page Program Operation time: 800μs (typ)

■ Cache Read mode

– Internal Cache Register to improve the read throughput

■ Fast Block Erase

– Block erase time: 1.5ms (typ)

■ Status Register

■ Electronic Signature

■ Serial Number option

■ Chip Enable ‘don’t care’

– for simple interface with microcontroller

■ Data Protection

– Hardware Program/Erase locked during power transitions

■ Embedded Error Correction Code (ECC)

– Internal ECC accelerator

– Easy ECC Command Interface

■ Data integrity

– 10,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

■ ECOPACK? package available

■ Development tools

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models