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NCE2004NE

NCEN-ChannelEnhancementModePowerMOSFET

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCE2004NE

DualN-Channel20V(D-S)MOSFET

FEATURES ?Halogen-freeAccordingtoIEC61249-2-21 Definition ?TrenchFET?PowerMOSFET ?100RgTested ?ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

NCE2004Y

NCEN-ChannelEnhancementModePowerMOSFET

Description TheNCE2004Yusesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures ●VDS=20V,ID=4A RDS(ON)

NCEPOWERWuxi NCE Power Semiconductor Co., Ltd

無錫新潔能股份無錫新潔能股份有限公司

NCS2004

WideSupplyRail-to-RailOutputOperationalAmplifier

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NCS2004A

WideSupplyRail-to-RailOutputOperationalAmplifier

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NCS2004AMUTAG

WideSupplyRail-to-RailOutputOperationalAmplifier

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NCS2004MUTAG

WideSupplyRail-to-RailOutputOperationalAmplifier

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NMA-2004

NMA2000NOISESOURCESERIES

MICRONETICS

Micronetics, Inc.

NSNJ2004

428MHzLowPowerTransceiver

NJRCNew Japan Radio

新日本無線株式會社

NTE2004

IntegratedCircuitDolbyNoiseReductionCircuit

Description: TheNTE2004isamonolithicaudionoisereductioncircuitina16–LeadDIPtypepackagedesignedforuseinDolby?B–Typenoisereductionsystems.Thisdeviceisusedtoreducethelevelofbackgroundnoiseintroducedduringrecordingandplaybackofaudiosignalsonmagnetictape

NTE

NTE Electronics

供應商型號品牌批號封裝庫存備注價格