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MTB75N03HDL中文資料摩托羅拉數(shù)據(jù)手冊PDF規(guī)格書
MTB75N03HDL規(guī)格書詳情
HDTMOS E-FET? Power Field Effect Transistor
DPAK for Surface Mount
N-Channel Enhancement-Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low–voltage, high–speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits, and inductive loads. The avalanche energy capability is specified to eliminate the guess work in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients.
? Avalanche Energy Specified
? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
? Diode is Characterized for Use in Bridge Circuits
? IDSSand VDS(on)Specified at Elevated Temperature
? Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
? Available in Insertion Mount, Add –1 or 1 to Part Number
產(chǎn)品屬性
- 型號：
MTB75N03HDL
- 制造商：
Motorola Inc
- 功能描述：
MOSFET Transistor, N-Channel, TO-263AB
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ON/ |
24+ |
SOT263 |
5000 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 | ||
MOT |
809+ |
TO263 |
839 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
ON |
23+ |
TO-263 |
6893 |
詢價 | |||
ON/安森美 |
24+ |
NA/ |
22 |
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票 |
詢價 | ||
ON |
24+ |
TO-263 |
504540 |
免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
詢價 | ||
NS |
23+ |
NA |
586 |
專做原裝正品,假一罰百! |
詢價 | ||
ON/安森美 |
23+ |
TO-263 |
9800 |
全新原裝現(xiàn)貨,假一賠十 |
詢價 | ||
MOTOROLA |
22+ |
TO-263 |
3000 |
原裝正品,支持實單 |
詢價 | ||
MOTOROLA/摩托羅拉 |
24+ |
TO-263 |
5000 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
mot |
24+ |
N/A |
6980 |
原裝現(xiàn)貨,可開13%稅票 |
詢價 |
