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MTA1N60E

FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N60E

TMOSPOWERFET1.0AMPERE600VOLTSRDS(on)=8.0OHM

TMOSE-FET?PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTD1N60E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP1N60

PowerFieldEffectTransisterN-ChannelEnhancementModeSiliconGate

PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. ?SiliconGateforFastSwitchingSpeeds—SwitchingTimesSpecif

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N60

N-ChannelMosfetTransistor

?DESCRITION ?Designedforhighefficiencyswitchmodepowersupply. ?FEATURES ?DrainCurrent-ID=1A@TC=25°C ?DrainSourceVoltage-:VDSS=600V(Min) ?StaticDrain-SourceOn-Resistance:RDS(on)=8Ω(Max) ?AvalancheEnergySpecified ?FastSwitching ?SimpleDriveRequirements

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MTP1N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

MTP1N60E

TMOSPOWERFET1.0AMPERES600VOLTSRDS(on)=8.0OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTP1N60E

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDDL1N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

NDTL1N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

詳細(xì)參數(shù)

  • 型號：

    MTA1N60E

  • 制造商：

    MOTOROLA

  • 制造商全稱：

    Motorola, Inc

  • 功能描述：

    FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR

供應(yīng)商型號品牌批號封裝庫存備注價格
ON
23+
TO-220F
6893
詢價
MOT
24+
N/A
1125
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PERSEMI
23+
DIP
15000
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05+
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4851
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TEConnectivity
新
521
全新原裝 貨期兩周
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TE Connectivity
2022+
517
全新原裝 貨期兩周
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TE
20+
開關(guān)元件
396
就找我吧!--邀您體驗愉快問購元件!
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ALCO
2
公司優(yōu)勢庫存 熱賣中!
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TE
24+
con
35960
查現(xiàn)貨到京北通宇商城
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TE/泰科
24+
7959
原廠現(xiàn)貨渠道
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更多MTA1N60E供應(yīng)商 更新時間2025-7-17 9:01:00

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