首頁(yè) >MST5350BTE>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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35V,1.6μAUltraLowQuiescentCurrent,200mA,LowDropoutVoltageRegulator Description TheMST53XXBseriesisahighvoltage， ultralow-power，lowdropoutvoltageregulator.The devicecandeliver100mAoutputcurrentwitha dropoutvoltageof300mVandallowsaninput voltageashighas35V.Thetypicalquiescentcurrent isonly1.6μA.Thedeviceisavailableinfi | MILESTONEWUXI MILESTONE SEMICONDUCTOR INC. 力芯微無(wú)錫力芯微電子股份有限公司 | MILESTONE | ||
50VlowVCEsatPNPtransistor | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
PNPtransistor DESCRIPTION PNPlowVCEsattransistorinaSC-74plasticpackage. NPNcomplement:PBSS4350D. FEATURES ?Highcurrentcapabilities ?LowVCEsat. APPLICATIONS ?Heavydutybatterypoweredequipment(Automotive,TelecomandAudio/Video)suchasmotorandlampdrivers ?VCEsatcriticalapplica | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
LowVCEsat(BISS)transistors | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcurrentcapability ?Highefficiencyduetolessheatgenera | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinasmallSOT457(SC-74)Surface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS4350D-Q 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltageVCEsat ?Highcurrentcapability ?Highefficiencyduetolessheatgene | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersaturati | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
50V,3APNPlowVCEsattransistor 1.Generaldescription PNPlowVCEsattransistorinDFN2020D-3(SOT1061D)leadlesssmallSurface-MountedDevice (SMD)plasticpackagewithvisibleandsolderablesidepads. NPNcomplement:PBSS4350PAS-Q 2.Featuresandbenefits ?DFN2020D-3(SOT1061D)package ?Lowcollector-emittersatura | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA | ||
Highpowerdissipation(830mW) DESCRIPTION PNPlowVCEsattransistorinaSOT54plasticpackage. NPNcomplement:PBSS4350S. FEATURES ?Highpowerdissipation(830mW) ?Ultralowcollector-emittersaturationvoltage ?3Acontinuouscurrent ?Highcurrentswitching ?Improveddevicereliabilityduetoreducedheat g | PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦 | Philips | ||
50V,2.7ANPN/NPNlowVCEsat(BISS)transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司 | NEXPERIA |
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