MRF8S9102NR3中文資料飛思卡爾數據手冊PDF規(guī)格書

865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET

Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 28 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01 Probability on CCDF.

? Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 144 Watts CW Output Power (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness

? Typical Pout @ 1 dB Compression Point ? 100 Watts CW

Features

? 100 PAR Tested for Guaranteed Output Power Capability

? Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters

? Internally Matched for Ease of Use

? Integrated ESD Protection

? Greater Negative Gate--Source Voltage Range for Improved Class C Operation

? Designed for Digital Predistortion Error Correction Systems

? Optimized for Doherty Applications

? 225°C Capable Plastic Package

? RoHS Compliant

? In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.