MRF184R1

N-Channel Enhancement-Mode Lateral MOSFETs

Designedforbroadbandcommercialandindustrialapplicationswithfrequenciesto1.0GHz.Thehighgainandbroadbandperformanceofthesedevicesmakethemidealforlarge–signal,commonsourceamplifierapplicationsin28voltbasestationequipment. ?GuaranteedPerformance@945MHz,28Volt

MRF184R1

1.0 GHz, 60 W, 28 V Lateral N-Channel Broadband RF Power MOSFET; \n?Guaranteed Performance at 945 MHz, 28 Volts\n\nOutput Power = 60 Watts\nPower Gain = 11.5 dB\nEfficiency = 53%\n\n?Characterized with Series Equivalent Large–Signal Impedance Parameters\n?S–Parameter Characterization at High Bias Levels\n?Excellent Thermal Stability\n?100% Tested for Load Mismatch Stress at all Phase Angleswith 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW\n?Available only in Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.\n;

Overview \"MRF184R1\" removed from active portfolio. Possible Replacement Part: \"MRF9060LR1\".The MRF184R1 is designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 28 volt base station equipment.

恩XP

DDR184R1

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DIMM184R1

DIMMSOCKETS.O.DIMMSOCKETDDRSOCKET

SOD184R1

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