MJD210

SILICON POWER TRANSISTORS 5 AMPERES 25 VOLTS 12.5 WATTS

SILICONPOWERTRANSISTORS5AMPERES25VOLTS12.5WATTS MJD200NPN MJD210PNP NPN/PNPSiliconDPAKForSurfaceMountApplications ...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. ?Collector–EmitterSustainingVoltage—VCEO(sus)=25Vdc(Min)@IC=10mAdc

MJD210

Complementary Plastic Power Transistors

ComplementaryPlasticPowerTransistors NPN/PNPSiliconDPAKForSurfaceMountApplications Designedforlowvoltage,low?power,high?gainaudioamplifierapplications. Features ?Collector?EmitterSustainingVoltage?VCEO(sus)=25Vdc(Min)@IC=10mAdc ?HighDCCurrentGain?hFE

MJD210

D-PAK for Surface Mount Applications

D-PAKforSurfaceMountApplications ?HighDCCurrentGain ?LowCollectorEmitterSaturationVoltage ?LeadFormedforSurfaceMountApplications(NoSuffix) ?StraightLead(I-PAK,“-I“Suffix)

MJD210

isc Silicon PNP Power Transistor

DESCRIPTION ?HighDCCurrentGain- :hFE=70(Min)@IC=-0.5A ?LowCollectorSaturationVoltage- :VCE(sat)=-0.3V(Max.)@IC=-0.5A ?ComplementtotheNPNMJD200 ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS ?Designedforlow

MJD210

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-25V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):=-0.3V(Max)@IC=-0.5A APPLICATIONS ·Designedforuseingeneralpurposeampliferandlow Speedswitchingapplications

MJD210

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

■DESCRIPTION TheUTCMJD210isdesignedforlowvoltage,low-power,high-gainaudioamplifierapplications. ■FEATURE *Collector-EmitterSustainingVoltage VCEO(SUS)=-25V(Min)@IC=-10mA *HighDCCurrentGain hFE=70(Min)@IC=-500mA =45(Min)@IC=-2A =10(Min)@

MJD210

Bipolar Transistor; ? Collector-Emitter Sustaining Voltage \n? VCEO(SUS) =-25V (Min) @ IC =-10mA \n? High DC Current Gain \n? hFE?? =70 (Min) @ IC=-500mA \n? =45 (Min) @ IC=-2A \n? =10 (Min) @ IC=-5A \n? Lead Formed for Surface Mount Applications in?? \n? Plastic Sleeves (No Suffix) \n? Straight Lead Version in Plastic Sleeves (“-1” Suffix) \n? Lead Formed Version in 16mm Tape and Reel (“T4” Suffix) \n? Low Collector – Emitter Saturation Voltage \n? VCE(SAT) = -0.3V (Max) @ IC =-500mA \n? = -0.75V (Max) @ IC = -2.0 A \n? High Current-Gain-Bandwidth Product \n? fT = 65 MHz (Min) @ IC = -100 mA \n? Annular Construction for Low Leakage \n? ICBO = -100 nA @ Rated VCB;

The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications.

MJD210

5.0 A, 25 V PNP Bipolar Power Transistor; ? Collector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc\n? High DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc= 45 (Min) @ IC = 2 Adc= 10 (Min) @ IC = 5 Adc\n? Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.30 Vdc (Max) @ IC = 500 mAdc= 0.75 Vdc (Max) @ IC = 2.0 Adc\n? High Current-Gain - Bandwidth Product - fT = 65 MHz (Min) @ IC = 100 mAdc\n? Annular Construction for Low Leakage - ICBO = 100 nAdc @ Rated VCB\n? NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable\n? These Devices are Pb-Free and are RoHS Compliant\n? MJD200 is the complementary NPN device\n;

The Bipolar Power Transistor is designed for low voltage, low power, high gain audio amplifier applications. The MJD200 (NPN) and MJD210 (PNP) are complementary devices.

MJD210

Complementary Plastic Power Transistors

MJD210

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS