首頁 >MCT521D>規(guī)格書列表
| 零件編號(hào) | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2WattsHighIn/OutIsolationDIPDC/DCConvertersSingleandDualOutputs | TOTAL-POWER Total Power International | TOTAL-POWER | ||
2W,Ultra-HighIsolationDIP,Single&DualOutputDC/DCConverters | MINMAXMinmax Technology Co., Ltd. 捷拓科技臺(tái)灣捷拓科技股份有限公司 | MINMAX | ||
SILICONNPNTRANSISTOR | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
SILICONNPNTRANSISTOR DESCRIPTION TheMJE521isasiliconEpitaxial-BaseNPNtransistorinJedecSOT-32plasticpackage. Itisintendedforusein5to20Waudioamplifiers,generalpurposeamplifierandswitchingcircuits. ■STMicroelectronicsPREFERRED SALESTYPE | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
4AMPEREPOWERTRANSISTORNPNSILICON40VOLTS40WATTS PlasticMedium-PowerNPNSiliconTransistor ...designedforuseingeneral–purposeamplifierandswitchingcircuits.Recommendedforusein5to10Wattaudioamplifiersutilizingcomplementarysymmetrycircuitry. ?DCCurrentGain—hFE=40(Min)@IC=1.0Adc ?Complementaryto | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
PlasticMedium??owerNPNSiliconTransistor Thesedevicesaredesignedforuseingeneral?purposeamplifierandswitchingcircuits.Recommendedforusein5to10Wattaudioamplifiersutilizingcomplementarysymmetrycircuitry. Features ?DCCurrentGain?hFE=40(Min)@IC =1.0Adc ?Co | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
SILICONCOMPLEMENTRYPOWERTRANSISTOR DESCRIPTION TheCENTRALSEMICONDUCTORMJE371,MJE521typesareComplementarySiliconPowerTransistorsdesignedforuseingeneralamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美國中央半導(dǎo)體 | Central | ||
iscSiliconNPNPowerTransistor DESCRIPTION ?Collector–EmitterSustainingVoltage- :VCEO(SUS)=40V(Min) ?DCCurrentGain- :hFE=40(Min)@IC=1A ?ComplementtoTypeMJE371 APPLICATIONS ?Designedforuseingeneral?purposeamplifierand switchingcircuitsapplications. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PlasticMedium??owerNPNSiliconTransistor Thesedevicesaredesignedforuseingeneral?purposeamplifierandswitchingcircuits.Recommendedforusein5to10Wattaudioamplifiersutilizingcomplementarysymmetrycircuitry. Features ?DCCurrentGain?hFE=40(Min)@IC =1.0Adc ?Co | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
NPNSiliconEpitaxialPlanarDigitalTransistor NPNSiliconEpitaxialPlanarDigitalTransistor | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半導(dǎo)體先之科半導(dǎo)體科技（東莞）有限公司 | SEMTECH_ELEC |
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