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PBSS2515

15VlowVCEsatNPNdoubletransistor

DESCRIPTION NPNlowVCEsatdoubletransistorinaSOT666plasticpackage. PNPcomplement:PBSS3515VS. FEATURES ?300mWtotalpowerdissipation ?Verysmall1.6x1.2mmultrathinpackage ?Excellentcoplanarityduetostraightleads ?Lowcollector-emittersaturationvoltage ?High

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS2515E

15V,0.5ANPNlowVCEsat(BISS)transistor

Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS2515F

15VlowVCEsatNPNtransistor

DESCRIPTION NPNlowVCEsattransistorinaSC-89(SOT490)plasticpackage. PNPcomplement:PBSS3515F. FEATURES ?Lowcollector-emittersaturationvoltage ?Highcurrentcapabilities ?Improvedthermalbehaviourduetoflatleads. APPLICATIONS ?Generalpurposeswitchingandmuting ?Lowf

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS2515M

15V,0.5ANPNlowVCEsat(BISS)transistor

FEATURES ?Lowcollector-emittersaturationvoltageVCEsat ?HighcollectorcurrentcapabilityICandICM ?Highefficiencyleadingtoreducedheatgeneration ?Reducedprinted-circuitboardrequirements. APPLICATIONS ?Powermanagement: –DC-DCconverter –Supplylineswitching –Batterycharg

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS2515MB

15V,0.5ANPNlowVCEsat(BISS)transistor

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS2515VPN

15VlowVCE(sat)NPN/PNPtransistor

FEATURES ?300mWtotalpowerdissipation ?Verysmall1.6×1.2mmultrathinpackage ?Excellentcoplanarityduetostraightleads ?Lowcollector-emittersaturationvoltage ?Highcurrentcapability ?Improvedthermalbehaviourduetoflatlead ?ReplacestwoSC75/SC89packagedlowVCEsattrans

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS2515VS

15VlowVCEsatNPNdoubletransistor

DESCRIPTION NPNlowVCEsatdoubletransistorinaSOT666plasticpackage. PNPcomplement:PBSS3515VS. FEATURES ?300mWtotalpowerdissipation ?Verysmall1.6x1.2mmultrathinpackage ?Excellentcoplanarityduetostraightleads ?Lowcollector-emittersaturationvoltage ?High

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS2515VS

15VlowVCEsatNPNdoubletransistor

1.Generaldescription NPNlowVCEsatdoubletransistorinaSOT666ultrasmallandflatleadSurface-MountedDevice (SMD)plasticpackage. PNPcomplement:PBSS3515VS 2.Featuresandbenefits ?300mWtotalpowerdissipation ?Verysmall1.6x1.2mmultrathinpackage ?Excellentcoplana

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

PBSS2515YPN

15VlowVCE(sat)NPN/PNPtransistor

DESCRIPTION NPN/PNPlowVCEsattransistorpairinaSC-88plasticpackage. FEATURES ?Lowcollector-emittersaturationvoltage ?Highcurrentcapability ?ReplacestwoSC-70packagedlowVCEsattransistorson samePCBarea ?ReducesrequiredPCBarea ?Reducedpickandplacecosts. APP

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PBSS2515YPN

15VlowVCEsatNPN/PNPtransistor

1.Generaldescription NPN/PNPlowVCEsattransistorpairinaSOT363(SC-88)verysmallSurface-MountedDevice (SMD)plasticpackage.. 2.Featuresandbenefits ?Lowcollector-emittersaturationvoltage ?Highcurrentcapability ?ReplacestwoSC-70packagedlowVCEsattransistorsonsam

NEXPERIANexperia B.V. All rights reserved

安世安世半導(dǎo)體(中國)有限公司

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MCT
23+
13000
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mct
23+
NA
2986
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BB
24+
SOP18
9600
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MICROCHIP
25+
SMT
15000
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Microchip(微芯)
2324+
NA
78920
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Microchip(微芯)
24+
NA/
8735
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Microchip
24+
14VDFN
10000
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Microchip Technology
24+
14-VDFN(4.5x3)
53620
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Microchip
1940+
N/A
400
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MICROCHIP/微芯
23+
14-VDFN
35200
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更多MCP2515T-ISO供應(yīng)商 更新時(shí)間2025-7-20 11:10:00

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