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MC74VHC00

Quad 2-Input NAND Gate

TheMC74VHC00isanadvancedhighspeedCMOS2–inputNANDgatefabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation.Theinternalcircuitiscomposedofthreestages,includingabuffe

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MC74VHC00

Quad 2??nput NAND Gate

TheMC74VHC00isanadvancedhighspeedCMOS2?inputNANDgatefabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation.Theinternalcircuitiscomposedofthreestages,includingabuffe

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MC74VHC00

Quad 2-Input NAND Gate; ? High Speed: tPD = 3.7ns (Typ) at VCC = 5V\n? Low Power Dissipation: ICC = 2μA (Max) at TA = 25 C\n? High Noise Immunity: VNIH = VNIL = 28% VCC\n? Power Down Protection Provided on Inputs\n? Balanced Propagation Delays\n? Designed for 2V to 5.5V Operating Range\n? Low Noise: VOLP = 0.8V (Max)\n? Pin and Function Compatible with Other Standard Logic Families\n? Latchup Performance Exceeds 300mA\n? ESD Performance: HBM > 2000V; Machine Model > 200V\n? Chip Complexity: 32 FETs or 8 Equivalent Gates\n;

The MC74VHC00 is an advanced high speed CMOS 2-input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The inputs tolerate voltages up to 7V, allowing the interface of 5V systems to 3V systems.

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MC74VHC00

Quad 2-Input NAND Gate;

恩XP

恩XP

MC74VHC00

Quad 2-Input NAND Gate

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MC74VHC00D

Quad 2-Input NAND Gate

TheMC74VHC00isanadvancedhighspeedCMOS2–inputNANDgatefabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation.Theinternalcircuitiscomposedofthreestages,includingabuffe

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MC74VHC00DR2

Quad 2??nput NAND Gate

TheMC74VHC00isanadvancedhighspeedCMOS2?inputNANDgatefabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation.Theinternalcircuitiscomposedofthreestages,includingabuffe

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MC74VHC00DR2G

Quad 2??nput NAND Gate

TheMC74VHC00isanadvancedhighspeedCMOS2?inputNANDgatefabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation.Theinternalcircuitiscomposedofthreestages,includingabuffe

ONSEMION Semiconductor

安森美半導體安森美半導體公司

MC74VHC00DT

Quad 2-Input NAND Gate

TheMC74VHC00isanadvancedhighspeedCMOS2–inputNANDgatefabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation.Theinternalcircuitiscomposedofthreestages,includingabuffe

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MC74VHC00DT

Quad 2??nput NAND Gate

TheMC74VHC00isanadvancedhighspeedCMOS2?inputNANDgatefabricatedwithsilicongateCMOStechnology.ItachieveshighspeedoperationsimilartoequivalentBipolarSchottkyTTLwhilemaintainingCMOSlowpowerdissipation.Theinternalcircuitiscomposedofthreestages,includingabuffe

ONSEMION Semiconductor

安森美半導體安森美半導體公司

技術參數(shù)

  • Pb-free：

    Pb

  • AEC Qualified：

    A

  • Halide free：

    H

  • PPAP Capablee：

    P

  • Status：

    Active

  • Type：

    NAND

  • Channels：

    4

  • VCC Min (V)：

    2

  • VCC Max (V)：

    5.5

  • tpd Max (ns)：

    7.5

  • IO Max (mA)：

    null

  • Package Type：

    SOIC-14

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更多MC74VHC00供應商 更新時間2025-7-29 16:00:00

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