首頁(yè) >MC14002BCPD>規(guī)格書列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
B-SuffixSeriesCMOSGates TheBSerieslogicgatesareconstructedwithPandNchannelenhancementmodedevicesinasinglemonolithicstructure(ComplementaryMOS).Theirprimaryuseiswherelowpowerdissipationand/orhighnoiseimmunityisdesired. 1.SupplyVoltageRange=3.0Vdcto18Vdc 2.AllOutputsBuffered | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
MJ14002 | SEME-LAB Seme LAB | SEME-LAB | ||
COMPLEMENTARYSILICONPOWERTRANSITORS Designedforuseinhigh?poweramplifierandswitchingcircuitapplications. Features ?HighCurrentCapability?ICContinuous=60Amperes ?DCCurrentGain?hFE=15?100@IC=50Adc ?LowCollector?EmitterSaturationVoltage?VCE(sat)=2.5Vdc(Max) @IC=50Adc ?Pb?FreePa | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
60AMPERESCOMPLEMENTARYSILICONPOWERTRANSITORS60-80VOLTS300WATTS High-CurrentComplementarySiliconPowerTransistors ...designedforuseinhigh–poweramplifierandswitchingcircuitapplications, ?HighCurrentCapability—ICContinuous=60Amperes ?DCCurrentGain—hFE=15–100@IC=50Adc ?LowCollector–EmitterSaturationVoltage— | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
High-CurrentComplementarySiliconPowerTransistors | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
iscSiliconNPNDarlingtonPowerTransistor | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
High??urrentComplementarySiliconPowerTransistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
High??urrentComplementarySiliconPowerTransistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
Indoor/OutdoorTightBufferCablePlenum | HUBBELL HUBBELL INCORPORATED | HUBBELL | ||
Indoor/OutdoorTightBufferCableRiser | HUBBELL HUBBELL INCORPORATED | HUBBELL |
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