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SP8510KS

12-BitSamplingA/DConverters

DESCRIPTION… TheSP85XXSeriesarecomplete12-bitsamplingA/Dconvertersusingstate–of–the–artCMOSstructures.Theycontainacomplete12–bitsuccessiveapproximationA/Dconverterwithinternalsample/hold,reference,clock,digitalinterfaceformicroprocessorcontrol,andthree–stateoutpu

SipexSipex Corporation

西伯斯西伯斯公司

TCP8510

MouldedTypeStraightPlugs

HOSIDEN

Hosiden Corporation

TDA8510

26WBTLand2x13WSEpoweramplifiers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

TDA8510J

26WBTLand2x13WSEpoweramplifiers

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

TPCP8510

TransistorSiliconNPNEpitaxialType

High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications ?HighDCcurrentgain:hFE=120to300(IC=0.1A) ?Lowcollector-emittersaturation:VCE(sat)=0.14V(max) ?High-speedswitching:tf=0.2μs(typ)

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TPCP8510

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. ?? GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES ?Packagetype:chip ?Packageform:singlechip ?Technology:surfaceemitter ?Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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MAXIM
23+
NA
25060
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maxim
20+
20000
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-
23+
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50000
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MAXIM
19+
SOT353
256800
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MAXIM/美信
23+
SOT353
50000
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MAXIM
24+
SOT353
2600
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MAXIM/美信
24+
NA/
3450
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更多MAX8510EXKXY-T供應(yīng)商 更新時(shí)間2025-6-28 9:03:00

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