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MIMXRT117CDVMAA

i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

MIMXRT117FDVMAA

i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

MIMXRT117FDVMAA

i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts

1.1Features Thei.MXRT1170processorsarebasedonArmCortex?-M7Core?Platform,whichhasthefollowing features: ?TheArmCortex-M7CorePlatform: —32KBL1InstructionCacheand32KBL1DataCache —FloatingPointUnit(FPU)withsingle-precisionanddouble-precisionsupportofArmv7

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

MIMXRT117HDVMAA

i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

MIMXRT117HDVMAA

i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts

1.1Features Thei.MXRT1170processorsarebasedonArmCortex?-M7Core?Platform,whichhasthefollowing features: ?TheArmCortex-M7CorePlatform: —32KBL1InstructionCacheand32KBL1DataCache —FloatingPointUnit(FPU)withsingle-precisionanddouble-precisionsupportofArmv7

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

MIMXRT117TDVMAA

i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

MIMXRT117TDVMAA

i.MXRT1170CrossoverProcessorsDataSheetforConsumerProducts

1.1Features Thei.MXRT1170processorsarebasedonArmCortex?-M7Core?Platform,whichhasthefollowing features: ?TheArmCortex-M7CorePlatform: —32KBL1InstructionCacheand32KBL1DataCache —FloatingPointUnit(FPU)withsingle-precisionanddouble-precisionsupportofArmv7

nxpNXP Semiconductors

恩智浦恩智浦半導體公司

MJD117

EPITAXIALPLANARPNPTRANSISTOR(MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE.)

MONOLITHICCONSTRUCTIONWITHBUILTINBASE-EMITTERSHUNTRESISTORSINDUSTRIALUSE. FEATURES ?HighDCCurrentGain.:hFE=1000(Min.),VCE=-4V,IC=-1A. ?LowCollector-EmitterSaturationVoltage. ?StraightLead(IPAK,LSuffix) ?ComplementarytoMJD112/L.

KECKEC CORPORATION

KEC株式會社

MJD117

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

Description Thedevicesaremanufacturedinplanartechnologywith“baseisland”layoutandmonolithicDarlingtonconfiguration. Features ■GoodhFElinearity ■HighfTfrequency ■MonolithicDarlingtonconfigurationwith integratedantiparallelcollector-emitterdiode Application ■Lin

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

MJD117

ComplementaryDarlingtonPowerTransistors

ComplementaryDarlingtonPowerTransistors DPAKForSurfaceMountApplications Designedforgeneralpurposepowerandswitchingsuchasoutputordriverstagesinapplicationssuchasswitchingregulators,converters,andpoweramplifiers. Features ?LeadFormedforSurfaceMountApplications

ONSEMION Semiconductor

安森美半導體安森美半導體公司

詳細參數(shù)

  • 型號：

    MAX117EAI-T

  • 功能描述：

    模數(shù)轉換器 - ADC

  • RoHS：

    否

  • 制造商：

    Texas Instruments

  • 通道數(shù)量：

    2

  • 結構：

    Sigma-Delta

  • 轉換速率：

    125 SPs to 8 KSPs

  • 分辨率：

    24 bit

  • 輸入類型：

    Differential

  • 信噪比：

    107 dB

  • 接口類型：

    SPI

  • 工作電源電壓：

    1.7 V to 3.6 V, 2.7 V to 5.25 V

  • 最大工作溫度：

    + 85 C

  • 安裝風格：

    SMD/SMT

  • 封裝/箱體：

    VQFN-32

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MAXIM
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更多MAX117EAI-T供應商 更新時間2025-5-24 10:32:00

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