M39832-B15WNE6T中文資料意法半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書

DESCRIPTION

The M39832 is a memory device combining Flash and EEPROM into a single chip and using single supply voltage. The memory is mapped in two arrays: 8 Mbit of Flash memory and 256 Kbit of EEPROM memory. Each space is independant for writing, in concurrent mode the Flash Memory can be read while the EEPROM is being written.

An additional 64 bytes of EPROM are One Time Programmable.

■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS FLASH ARRAY

– Boot block (Top or Bottom location)

– Parameter and Main blocks

– Selectable x8/x16 Data Bus (BYTE pin).

■ EEPROM ARRAY

– x8 Data Bus only.

■ 120ns ACCESS TIME (Flash and EEPROM array)

■ WRITE, PROGRAM and ERASE STATUS BITS

■ CONCURRENT MODE (Read Flash while writing to EEPROM)

■ 100,000 ERASE/WRITE CYCLES

■ 10 YEARS DATA RETENTION

■ LOW POWER CONSUMPTION

– Stand-by mode: 100μA

– Automatic Stand-by mode

■ 64 bytes ONE TIME PROGRAMMABLE MEMORY (x8 Data Bus only)

■ STANDARD EPROM/OTP MEMORY PACKAGE

■ EXTENDED TEMPERATURE RANGES