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MMSZ5256B

Marking：M1；Surface mount zener diode

SYChangzhou Shunye Electronics Co.,Ltd.

順燁電子江蘇順燁電子有限公司

MMSZ5256B

Marking：M1；Package：SOD-323；Silicon Planar Zener Diodes

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑風(fēng)微電子廣東佑風(fēng)微電子有限公司

TPS3899DL20DSER

Marking：M1；Package：WSON；TPS3899 Nano-Power, Precision Voltage Supervisor, Push-Button Monitor with Programmable Sense and Reset Delay

TITexas Instruments

德州儀器美國(guó)德州儀器公司

ADM18N03Z

Marking：M18N03Z；Package：PDFN33；N-Channel Enhancement Mode Field Effect Transistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●GreenDeviceAvailable Description: TheADM18N03ZusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withl

ADVAdvanced (Shenzhen) Electronics Co.,Ltd

愛德微愛德微(深圳)電子有限公司

AP6714M10G-13

Marking：M10；Package：MSOP-10L；1.8MHz SYNCHRONOUS BOOST CONVERTER

Features ?94EfficientStep-UpDCtoDCConverter ?WideInputRange0.9Vto5.5V ?1.8Vto5.5VAdjustableOutputVoltage ?1.8MHzOperatingFrequency ?CurrentModeOperationforfastertransientresponseandbetterloopstability ?1μAShutdownMode ?SuitablewithLowESRCeramicCapac

DIODESDiodes Incorporated

美臺(tái)半導(dǎo)體

CPDT-15VUB-HF

Marking：M12；Package：SOT-23；SMD ESD Protection Diode

Features -Workingvoltages:3.3V~36V -Lowleakagecurrent. -Lowclampingvoltage. -IEC61000-4-2(ESD)±15kV(air),±8kV(contact). -IEC61000-4-4(EFT)40A(5/50ns). -Protectsonebidirectionallineortwo unidirectionallines. -350Wpeakpulsepowerper(tp=8/20μs).

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CPDT-18VUB-HF

Marking：M18；Package：SOT-23；SMD ESD Protection Diode

Features -Workingvoltages:3.3V~36V -Lowleakagecurrent. -Lowclampingvoltage. -IEC61000-4-2(ESD)±15kV(air),±8kV(contact). -IEC61000-4-4(EFT)40A(5/50ns). -Protectsonebidirectionallineortwo unidirectionallines. -350Wpeakpulsepowerper(tp=8/20μs).

COMCHIPComchip Technology

典琦典琦科技股份有限公司

CPDT-3V3UB-HF

Marking：M15；Package：SOT-23；SMD ESD Protection Diode

Features -Workingvoltages:3.3V~36V -Lowleakagecurrent. -Lowclampingvoltage. -IEC61000-4-2(ESD)±15kV(air),±8kV(contact). -IEC61000-4-4(EFT)40A(5/50ns). -Protectsonebidirectionallineortwo unidirectionallines. -350Wpeakpulsepowerper(tp=8/20μs).

COMCHIPComchip Technology

典琦典琦科技股份有限公司

ESD12V23T-2A

Marking：M12；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 320~450WattsPeakPulsePowerperLine(tp=8/20μs) Protectsonebidirectionallineortwounidirectionallines Lowclampingvoltage Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-2(ESD)±30kV(air),±30kV(contact):3.3V~15V IEC61000-4-2(ESD)±20kV(air),±20kV

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

ESD12V23TS-2A

Marking：M12；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 320~450WattsPeakPulsePowerperLine(tp=8/20μs) Protectsonebidirectionallineortwounidirectionallines LowClampingVoltage WorkingVoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2

UNSEMIUN Semiconducctor INC

優(yōu)恩半導(dǎo)體深圳市優(yōu)恩半導(dǎo)體有限公司

詳細(xì)參數(shù)

  • 型號(hào)：

    M1

  • 制造商：

    Carlo Gavazzi

  • 功能描述：

    TRANSFORMER CURRENT

  • 5：

    0.5A

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
MICROCHIP(美國(guó)微芯)
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2021+
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MCC
20+
SMAE
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TOSHIBA/東芝
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DO214
15000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
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更多M1供應(yīng)商 更新時(shí)間2025-6-26 10:22:00

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