LX5510

InGaP HBT 2.4-2.5 GHz Power Amplifier

DESCRIPTION TheLX5510isapoweramplifieroptimizedforWLANapplicationsinthe2.4-2.5GHzfrequencyrange.ThePAisimplementedasatwo-stagemonolithicmicrowaveintegratedcircuit(MMIC)withactivebiasandinput/outputpre-matching. ThedeviceismanufacturedwithanInGaP/GaAsHetero

LX5510

InGaP HBT 2.4 ??2.5 GHz Power Amplifier

LX5510B

InGaP HBT 2.4 - 2.5 GHz Power Amplifier

DESCRIPTION TheLX5510BisapoweramplifieroptimizedforWLANapplicationsinthe2.4-2.5GHzfrequencyrange.ThePAisimplementedasatwo-stagemonolithicmicrowaveintegratedcircuit(MMIC)withactivebiasandinput/outputpre-matching. ThedeviceismanufacturedwithanInGaP/GaAsHeter

LX5510BLQ

InGaP HBT 2.4 - 2.5 GHz Power Amplifier

DESCRIPTION TheLX5510BisapoweramplifieroptimizedforWLANapplicationsinthe2.4-2.5GHzfrequencyrange.ThePAisimplementedasatwo-stagemonolithicmicrowaveintegratedcircuit(MMIC)withactivebiasandinput/outputpre-matching. ThedeviceismanufacturedwithanInGaP/GaAsHeter

LX5510BLQ

WLAN Power Amplifiers (PA);

For new designs consider the LX5511LQ.The LX5510B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching.FeaturesAdvanced InGaP HBT 2.4 – 2.5GHz OperationSingle-Polarity 3.3V SupplyLow Quiescent Current ICQ ~70mAPower Gain ~19dB @ 2.45GHz and Pout = 19dBmTotal Current 135mA for Pout = 19dBm @ 2.45GHzOFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBmSmall Footprint (3 x 3 mm2)Low Profile (0.9mm)??ROHS, PB Free

LX5510LQ

WLAN Power Amplifiers (PA);

Key Features: Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~65mA Power Gain ~20dB @ 2.45GHz and Pout = 19dBm Total Current 120mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3x3mm2) Low Profile (0.9mm) Description: The LX5510 is a power amplifier optimized for WLAN applications in the 2.4-2.5GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V 20dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 120mA total DC current with the nominal 3.3V bias. With increased bias of 4.5V EVM is ~ 5% at 23dBm. The LX5510 is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5510 an ideal solution for medium-gain power amplifier requirements for IEEE 802.11b/g applications??ROHS, PB Free

LX5510-LQ

InGaP HBT 2.4-2.5 GHz Power Amplifier

DESCRIPTION TheLX5510isapoweramplifieroptimizedforWLANapplicationsinthe2.4-2.5GHzfrequencyrange.ThePAisimplementedasatwo-stagemonolithicmicrowaveintegratedcircuit(MMIC)withactivebiasandinput/outputpre-matching. ThedeviceismanufacturedwithanInGaP/GaAsHetero

LX5510_05

InGaP HBT 2.4 ??2.5 GHz Power Amplifier

LX5510LQ

InGaP HBT 2.4 ??2.5 GHz Power Amplifier

LX5510-LQ

InGaP HBT 2.4-2.5 GHz Power Amplifier;