LX5506MLQ

WLAN Power Amplifiers (PA); ·Broadband 4.9-5.9GHz Operation\n·Advanced InGaP HBT\n·Single-Polarity 3.3V Supply\n·Power Gain ~ 30dB at 5.25GHz\n·Power Gain > ~28dB Across 4.9-5.9GHz\n·EVM ~ -30dB at Pout=+17dBm at 5.25GHz\n·EVM ~ -30dB at Pout=+18dBm at 5.85GHz\n·Total Current ~140mA for Pout = +17dBm at 5.25GHz (For High Duty Cycle of 90%)\n·Maximum Linear Power ~ +22dBm for OFDM Mask Compliance\n·Maximum Linear Efficiency ~ 20%\n·On-chip Output Power Detector with Improved Frequency and Load-VSWR Insensitivity\n·On-Chip Input Match\n·On-Chip RF Decoupling\n·Simple Output Match for Optimal Broadband EVM\n·Small Footprint: 3x3mm2\n·Low Profile: 0.9mm\n  ROHS, PB Free;

The LX5506M is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9-5.9GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias, on-chip input matching and output prematching. The device is manufactured with an InGaP/GaAs Hetero-junction Bipolar Transistor (HBT) IC process (MOCVD). It operates with a single positive voltage supply of 3.3V (nominal), with up to +22dBm linear output power for 802.11a OFDM spectrum mask compliance, and low EVM of -30dB for up to +18dBm output power in the 4.9-5.9GHz band. LX5506M features high gain of up to 30dB with low quiescent current of 90mA, and high power added efficiency of up to 20% at maximum linear output power for OFDM mask compliance. It also features an on-chip output power detector to help reduce BOM cost and board space in system implementation. The on-chip detector allows simple interface with an external directional coupler, providing accurate output power level readings insensitive to frequency, temperature, and load VSWR. LX5506M is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes LX5506M an ideal solution for broadband, high-gain power amplifier requirements for IEEE802.11a, and Hiperlan2 portable WLAN applications.

LX5506MLQ

InGaP HBT 4.5 ??6GHz Power Amplifier

LX5506MLQ-TR

InGaP HBT 4.5 ??6GHz Power Amplifier

NDL5506P

1000to1600nmOPTICALFIBERCOMMUNICATIONS80mmInGaAsPINPHOTODIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NDL5506P

1300nmOPTICALANALOGCATVSYSTEM80mmInGaAsPINPHOTODIODEMODULEWITHSMF

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NDL5506P

1000to1600nmOPTICALFIBERCOMMUNICATIONS30mmInGaAsAVALANCHEPHOTODIODEMODULE

DESCRIPTION NDL5531PSeriesisanInGaAsavalanchephotodiodemodulewithsinglemodefiber.Itisdesignedfordetectorsoflongwavelengthtransmissionsystems.Theseriescoversthewavelengthrangebetween1000and1600nm. FEATURES ?SmalldarkcurrentID=5nA ?Smallterminalcapaci

NDL5506P

1000to1600nmOPTICALFIBERCOMMUNICATIONS50mmInGaAsAVALANCHEPHOTODIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NDL5506P

1000to1600nmOPTICALFIBERCOMMUNICATIONS50mmInGaAsPINPHOTODIODEMODULE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NDL5506P

PHOTODIODE

f50mmInGaAsAVALANCHEPHOTODIODE 14-PINDIPMODULEWITHTEC

NDL5506PC

PHOTODIODE

f50mmInGaAsAVALANCHEPHOTODIODE 14-PINDIPMODULEWITHTEC