LP3000

2 W POWER PHEMT

DESCRIPTIONANDAPPLICATIONS TheLP3000isanAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)PseudomorphicHighElectronMobilityTransistor(PHEMT),utilizinganElectron-Beamdirectwrite0.25mmby3000mmSchottkybarriergate.Therecessed“mushroom”gatestructureminim

LP3000

2W Power PHEMT

DESCRIPTIONANDAPPLICATIONS TheLP3000isanAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)PseudomorphicHighElectronMobilityTransistor(PHEMT),utilizinganElectron-Beamdirect-write0.25μmby3000μmSchottkybarriergate.Therecessed“mushroom”gatestructureminim

LP3000

2 W POWER PHEMT;

LP3000P100

PACKAGED 2W POWER PHEMT; ?? ? 33 dBm Output Power at 1-dB Compression at 15 GHz\n?? ? 8 dB Power Gain at 15 GHz\n?? ? 60% Power-Added Efficiency;

● DESCRIPTION AND APPLICATIONS\nThe LP3000P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 mm x 3000 mm Schottky barrier gate, defined by electron-beam photolithography. The recessed “mushroom” gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The LP3000 also features Si3N4 passivation and is available in die form or in other packages.\nThe LP3000P100 is designed for medium-power, linear amplification. This device is suitable for applications in commercial and military environments, and it is appropriate to be used as a medium power transistor in SATCOM uplink transmitters, medium-haul digital radio transmitters, PCS high efficiency amplifiers, and WLL systems.● FEATURES\n?? ? 33 dBm Output Power at 1-dB Compression at 15 GHz\n?? ? 8 dB Power Gain at 15 GHz\n?? ? 60% Power-Added Efficiency

LP3000P100

PACKAGED 2W POWER PHEMT

●DESCRIPTIONANDAPPLICATIONS TheLP3000P100isapackagedAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)pseudomorphicHighElectronMobilityTransistor(pHEMT).Itutilizesa0.25mmx3000mmSchottkybarriergate,definedbyelectron-beamphotolithography.Therecessed“

LP3000SOT89

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

●DESCRIPTIONANDAPPLICATIONS TheLP3000SOT89isapackagedAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)pseudomorphicHighElectronMobilityTransistor(pHEMT).Itutilizesa0.25mmx3000mmSchottkybarriergate,definedbyelectron-beamphotolithography.Therecessed

LP3000SOT89-1

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

●DESCRIPTIONANDAPPLICATIONS TheLP3000SOT89isapackagedAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)pseudomorphicHighElectronMobilityTransistor(pHEMT).Itutilizesa0.25mmx3000mmSchottkybarriergate,definedbyelectron-beamphotolithography.Therecessed

LP3000SOT89-2

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

●DESCRIPTIONANDAPPLICATIONS TheLP3000SOT89isapackagedAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)pseudomorphicHighElectronMobilityTransistor(pHEMT).Itutilizesa0.25mmx3000mmSchottkybarriergate,definedbyelectron-beamphotolithography.Therecessed

LP3000SOT89-3

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

●DESCRIPTIONANDAPPLICATIONS TheLP3000SOT89isapackagedAluminumGalliumArsenide/IndiumGalliumArsenide(AlGaAs/InGaAs)pseudomorphicHighElectronMobilityTransistor(pHEMT).Itutilizesa0.25mmx3000mmSchottkybarriergate,definedbyelectron-beamphotolithography.Therecessed

LP3000SOT89

LOW NOISE, HIGH LINEARITY PACKAGED PHEMT;