首頁 >K20N60T>規(guī)格書列表
零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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Highspeedswitching | KECKEC CORPORATION KEC株式會社 | KEC | ||
Highspeedswitching | KECKEC CORPORATION KEC株式會社 | KEC | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovidesfastswitchingcharacteristicsandresultsinefficie | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
InsulatedGateBipolarTransistor InsulatedGateBipolarTransistorN–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Italsoprovideslowon–voltagewhichresultsinefficientoperationat | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
InsulatedGateBipolarTransistorwithAnti-ParallelDiode ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.ShortcircuitratedIGBT’sarespecificallysuitedforapplicationsrequiringaguara | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
600VSiliconN-ChannelPowerMOSFET | CITCChip Integration Technology Corporation 竹懋科技竹懋科技股份有限公司 | CITC | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Features ?Ultrafastbodydiode ?Ruggedpolysilicongatecellstructure ?IncreasedUnclampedInductiveSwitching(UIS)capability ?Hermeticallysealed,surfacemountpowerpackage ?Lowpackageinductance ?Verylowthermalresistance ?Reversepolarityavailableuponrequest | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
500VN-ChannelMOSFET | BWTECH Bruckewell Technology LTD | BWTECH | ||
SuperJunctionMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER | ||
SuperJunctionMOSFET | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 無錫新潔能股份無錫新潔能股份有限公司 | NCEPOWER |
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