首頁(yè) >K20A60T>規(guī)格書(shū)列表
| 零件編號(hào) | 下載 訂購(gòu) | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FieldEffectTransistorSiliconNChannelMOSType(DTMOS?? SwitchingRegulatorApplications ?Lowdrain-sourceON-resistance:RDS(ON)=0.165Ω(typ.) ?Highforwardtransferadmittance:?Yfs?=12S(typ.) ?Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) ?Enhancement-mode:Vth=3.0to5.0V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
MOSFETsSiliconN-ChannelMOS Applications ?SwitchingVoltageRegulators Features (1)Lowdrain-sourceon-resistance:RDS(ON)=0.13Ω(typ.) byusedtoSuperJunctionStructure:DTMOS (2)EasytocontrolGateswitching (3)Enhancementmode:Vth=2.7to3.7V(VDS=10V,ID=1mA) | TOSHIBAToshiba Semiconductor 東芝株式會(huì)社東芝 | TOSHIBA | ||
FRED | NI National Instruments Inc. | NI | ||
FRD-LowForwardVoltageDrop ForPowerFactorImprovementHighFrequencyRectification FEATURES *SimilartoTO-247ACCase *DualDiodes–CathodeCommon *Ultra–FastRecovery *LowForwardVoltageDrop *HighSurgeCapability | NIEC Nihon Inter Electronics Corporation | NIEC | ||
PowerSchottkyRectifier-20Amp60Volt | SIRECTSirectifier Global Corp. 矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司 | SIRECT | ||
PowerSchottkyRectifier-20Amp60Volt | SIRECTSirectifier Global Corp. 矽萊克半導(dǎo)體深圳市矽萊克半導(dǎo)體有限公司 | SIRECT | ||
LowVFPlanarMOSBarrierSchottkyRectifiers | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
LowVFPlanarMOSBarrierSchottkyRectifiers | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
LowVFPlanarMOSBarrierSchottkyRectifier | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
LowVFPlanarMOSBarrierSchottkyRectifier | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
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