TPS7A2030PDQNR

Marking：JJ；Package：X2SON；TPS7A20 300-mA, Ultra-Low-Noise, Low-IQ, High PSRR LDO

TPS7A2030PDQNR

Marking：JJ；Package：X2SON；TPS7A20 300-mA, Ultra-Low-Noise, Low-IQ, High PSRR LDO

RT9166-15PX

Marking：JJ-；Package：SOT-89；300/600mA, Ultra-Fast Transient Response LDO Regulator

GeneralDescription TheRT9166/AseriesareCMOSlowdropoutregulatorsoptimizedforultra-fasttransientresponse.Thedevicesarecapableofsupplying300mAor600mAofoutputcurrentwithadropoutvoltageof230mVor580mVrespectively. Features ?LowQuiescentCurrent(Typically220μA) ?

RT9167A-33GB

Marking：JJ=***；Package：SOT-25；Low-Noise, Fixed Output Voltage,300mA/500mA LDO Regulator

GeneralDescription TheRT9167/Aisa300mA/500mAlowdropoutandlownoisemicropowerregulatorsuitableforportableapplications.Theoutputvoltagesrangefrom1.5Vto5.0Vin100mVincrementsand2accuracy.TheRT9167/AisdesignedforusewithverylowESRcapacitors.Theoutputremains

RT9167A-33PB

Marking：JJ-***；Package：SOT-25；Low-Noise, Fixed Output Voltage,300mA/500mA LDO Regulator

GeneralDescription TheRT9167/Aisa300mA/500mAlowdropoutandlownoisemicropowerregulatorsuitableforportableapplications.Theoutputvoltagesrangefrom1.5Vto5.0Vin100mVincrementsand2accuracy.TheRT9167/AisdesignedforusewithverylowESRcapacitors.Theoutputremains

RT9526GQW

Marking：JJ*；Package：WDFN-82x2；Linear Single Cell Li-Ion Battery Charger with Input Over Voltage Protection

GeneralDescription TheRT9526isafullyintegratedlowcostsinglecellLi-ionbatterychargeridealforportableapplications.TheRT9526iscapableofbeingpoweredupfromACadapterandUSB(UniversalSerialBus)portinputs.TheRT9526enterssleepmodewhensuppliesareremoved. Fe

SSM3J117TU

Marking：JJ9；Package：2-2U1A；TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type

DC-DCconverterApplications High-SpeedSwitchingApplications ?4Vdrive ?LowON-resistance:RDS(ON)=225mΩ(max)(@VGS=?4V) RDS(ON)=117mΩ(max)(@VGS=?10V)

SSM3J132TU

Marking：JJK；Package：UFM；MOSFETs Silicon P-Channel MOS (U-MOSVI)

Applications ?PowerManagementSwitches Features (1)1.2-Vdrive (2)Lowdrain-sourceon-resistance :RDS(ON)=94mΩ(max)(VGS=-1.2V) RDS(ON)=39mΩ(max)(VGS=-1.5V) RDS(ON)=29mΩ(max)(VGS=-1.8V) RDS(ON)=21mΩ(max)(VGS=-2.5V) RDS(ON)=17mΩ(max)(VGS=-4.5V)

SSM3J135TU

Marking：JJN；Package：SOT-323；P-Channel MOSFET

■Features ●VDS(V)=-20V ●ID=-3.0A ●1.5Vdrive ●LowON-resistance: RDS(ON)=260m?(max)(@VGS=-1.5V) RDS(ON)=180m?(max)(@VGS=-1.8V) RDS(ON)=132m?(max)(@VGS=-2.5V) RDS(ON)=103m?(max)(@VGS=-4.5V)

BAV70-G

Marking：JJG；Package：SOT-23；Small Signal Switching Diode, Dual