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KF4N60D

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF4N60D

PowerMOSFET

FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

KF4N60D/I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF4N60DI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF4N60DSLASHI

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KF4N60F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=4A ?Dra

KECKEC CORPORATION

KEC株式會(huì)社

KF4N60I

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=600V,ID=3.2A ?D

KECKEC CORPORATION

KEC株式會(huì)社

KSM4N60

600VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB4N60

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMD4N60

Excellentpackageforgoodheatdissipation.

KERSEMI

Kersemi Electronic Co., Ltd.

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sino
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吉林華微
2447
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105000
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JCS
23+
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5000
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吉林華微
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TO-220C
22820
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N/A
82000
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Sino-Micro
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22+
6000
十年配單,只做原裝
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22+
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25000
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TO-TO-220
12300
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50000
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AOS/萬(wàn)代
24+
TO-220C
50000
全新原裝,一手貨源,全場(chǎng)熱賣!
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更多JCS4N60BE-B-B供應(yīng)商 更新時(shí)間2025-5-20 16:10:00