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KF13N50PSLASHF

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforelectronicballastandswitchingmodepowersupplies. FEATURES ?VDSS=500V,ID=13A ?Dr

KECKEC CORPORATION

KEC株式會(huì)社

KSM13N50

AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON)

KERSEMI

Kersemi Electronic Co., Ltd.

KSM13N50C

500VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MDF13N50

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50B

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50BTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50BTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDF13N50G

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50GTH

N-ChannelMOSFET500V,13.0A,0.5(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF13N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=13A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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S
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6000
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30000
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N/A
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更多JCS13N50C供應(yīng)商 更新時(shí)間2025-7-11 10:05:00

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