IS-1825ASRH

Single Event and Total Dose Hardened, High-Speed Dual Output PWMs

Features ?ElectricallyscreenedtoDLASMD5962-02511 ?QMLqualifiedperMIL-PRF-38535requirements ?Oscillatorfrequency:1MHz(max) ?Highoutputdrivecurrent:1Apeak(typ) ?Lowstartupcurrent:300μA(max) ?UndervoltageLockout ?Startthreshold:8.8V(max) ?Stopthreshold:7.6V

IS-1825ASRH

Single Event and Total Dose Hardened, High-speed, Dual Output PWMs; ? Electrically screened to DLA SMD# 5962-02511\n? QML qualified per MIL-PRF-38535 requirements \n? EH version is wafer-by-wafer acceptance tested to 50krad(Si) LDR \n? Oscillator frequency: 1MHz (max) \n? High output drive current: 1A peak (typ) \n? Low startup current: 300μA (max) \n? Undervoltage Lockout \n? Start threshold: 8.8V (max) \n? Stop threshold: 7.6V (min) \n? Hysteresis: 300mV (min) \n? Pulse-by-pulse current limiting \n? Programmable leading edge blanking \n? Radiation Hardness \n? High Dose Rate (HDR) (50-300rad(Si)/s): 300krad(Si) \n? Low Lose Rate (LDR) (0.01rad(Si)/s): 50krad(Si) \n? Latch-up immune (dielectrically isolated) \n? SEU immune: LET= 35MeV?cm2/mg\n;

The IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, and ISL71823BSRH are single event and total dose hardened pulse width modulators designed to be used in high-frequency switching power supplies in either voltage or current-mode configurations. These devices include a precision voltage reference, a low power start-up circuit, a high-frequency oscillator, a wide-band error amplifier, and a fast current-limit comparator.The IS-1825xSRH and IS-1825xSEH feature dual, alternating output operating from zero to less than 50% duty cycle, and the ISL71823xSRH features dual in-phase output operating from zero to less than 100% duty cycle. The B versions of the parts test the delay from clock out to PWM output switching after power has been applied to the modulator (tPWM) (see Figure 2 on page 9). The SEH parts are wafer-by-wafer acceptance tested to 50krad(Si) at a low dose rate of Constructed with the Rad-hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single-event latch-up and have been specifically designed to provide a high level of immunity to single-event transients. All specified parameters are established and tested for 300krad(Si) total dose performance.The devices are offered in a 16 Ld CDIP or a 20 Ld CDFP and fully specified to across the temperature range of -50°C to +125°C.

IS-1825ASRH

Single Event and Total Dose Hardened, High-Speed, Dual Output PWMs

IS-1825BSEH

SingleEventandTotalDoseHardened,High-SpeedDualOutputPWMs

Features ?ElectricallyscreenedtoDLASMD5962-02511 ?QMLqualifiedperMIL-PRF-38535requirements ?Oscillatorfrequency:1MHz(max) ?Highoutputdrivecurrent:1Apeak(typ) ?Lowstartupcurrent:300μA(max) ?UndervoltageLockout ?Startthreshold:8.8V(max) ?Stopthreshold:7.6V

IS-1825BSRH

SingleEventandTotalDoseHardened,High-SpeedDualOutputPWMs

Features ?ElectricallyscreenedtoDLASMD5962-02511 ?QMLqualifiedperMIL-PRF-38535requirements ?Oscillatorfrequency:1MHz(max) ?Highoutputdrivecurrent:1Apeak(typ) ?Lowstartupcurrent:300μA(max) ?UndervoltageLockout ?Startthreshold:8.8V(max) ?Stopthreshold:7.6V

IS-1825XSRH

SingleEventandTotalDoseHardened,High-SpeedDualOutputPWMs

Features ?ElectricallyscreenedtoDLASMD5962-02511 ?QMLqualifiedperMIL-PRF-38535requirements ?Oscillatorfrequency:1MHz(max) ?Highoutputdrivecurrent:1Apeak(typ) ?Lowstartupcurrent:300μA(max) ?UndervoltageLockout ?Startthreshold:8.8V(max) ?Stopthreshold:7.6V