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IRFP360

MegaMOS FET

Features ?Fastswitchingtimes ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutingdv/dtrating Applications ?DCchoppers ?MotorControls ?Switch-modeandresonant-mode ?Uninterruptablepowersupplies(UPS) Adva

IXYS

IXYS Corporation

IRFP360

isc N-Channel MOSFET Transistor

FEATURES ?DrainCurrent–ID=23A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ?FastSwitching DESCRIPTION ?Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRFP360

Avalanche-Energy-Rated N-Channel Power MOSFETs

TheIRFP360andIRFP362areadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperationThesearen-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingre

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

IRFP360

Power MOSFET

FEATURES ?DynamicdV/dtrated ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinfo

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360

23A, 400V, 0.200 Ohm, N-Channel Power MOSFET

ThisadvancedpowerMOSFETisdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingc

Intersil

Intersil Corporation

IRFP360

Power MOSFET(Vdss=400V, Rds(on)=0.20ohm, Id=23A)

IRF

International Rectifier

IRFP360

23A, 400V, 0.200 Ohm, N-Channel Power MOSFET; ? 23A, 400V\n? rDS(ON) = 0.200?\n? Single Pulse Avalanche Energy Rated\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Related Literature\n?? - TB334 “Guidelines for Soldering Surface Mount\n????? Components to PC Boards”;

This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

RenesasRenesas Technology Corp

瑞薩瑞薩科技有限公司

IRFP360

N-Channel: Standard Power MOSFETs; ·Breakdown voltages (VDSS) up to 4500V\n·Current ratings (ID25) ranging from 100mA to 250A\n·Ultra-low RDS(on) - as low as 7.5 milliohm\n·High power density\n·Easy to mount\n·PCB space savings\n·International standard and proprietary high voltage packages\n;

Littelfuselittelfuse

力特力特公司

IRFP360

Power MOSFET; ? Dynamic dV/dt rated\n? Repetitive avalanche rated\n? Isolated central mounting hole\n\n\n\n;

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRFP360

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

技術(shù)參數(shù)

  • Package Style：

    TO-247

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
25+
TO-3P
6500
十七年專營原裝現(xiàn)貨一手貨源,樣品免費(fèi)送
 詢價(jià)
23+
TO-3P
12800
專注原裝正品現(xiàn)貨特價(jià)中量大可定
 詢價(jià)
IR
24+
TO247
4000
原裝原廠代理 可免費(fèi)送樣品
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
06+
TO-247
1000
全新原裝 絕對有貨
 詢價(jià)
IR
24+/25+
50
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
 詢價(jià)
IR
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
HAR
24+
SOT
39
詢價(jià)
VISHAY/IR
24+
原廠封裝
7725
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
16+
TO-3P
10000
全新原裝現(xiàn)貨
 詢價(jià)
更多IRFP360供應(yīng)商 更新時(shí)間2025-7-29 9:38:00

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