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IRF634NLPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

IRF634NLPBF
廠商型號(hào)

IRF634NLPBF

功能描述

HEXFET Power MOSFET

文件大小

222.71 Kbytes

頁(yè)面數(shù)量

11 頁(yè)

生產(chǎn)廠商 International Rectifier
企業(yè)簡(jiǎn)稱

IRF

中文名稱

International Rectifier官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-5-30 23:01:00

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IRF634NLPBF規(guī)格書(shū)詳情

Description

Fifth Generation HEXFET? Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Ease of Paralleling

Simple Drive Requirements

Lead-Free

產(chǎn)品屬性

  • 型號(hào):

    IRF634NLPBF

  • 功能描述:

    MOSFET N-Chan 250V 8.0 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
IR
24+
NA/
1198
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
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VISHAY/威世
11+
TO-220
11000
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IR
05+
原廠原裝
1001
只做全新原裝真實(shí)現(xiàn)貨供應(yīng)
詢價(jià)
VISHAY
25+23+
TO-220
27730
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢價(jià)
IR
23+
D2-Pak
8600
全新原裝現(xiàn)貨
詢價(jià)
IR
22+
TO-263
8000
原裝正品支持實(shí)單
詢價(jià)
VishayIR
24+
TO-262
9
詢價(jià)
IR
23+
TO-263
35890
詢價(jià)
Vishay Siliconix
22+
TO2623 Long Leads I2Pak TO262A
9000
原廠渠道,現(xiàn)貨配單
詢價(jià)
IR
1816+
TO-262
6523
科恒偉業(yè)!只做原裝正品,假一賠十!
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