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IRF540F

N -Channel Power MOSFET (100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540FI

N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET

N-CHANNEL100V-00.50?-30A-TO-220/TO-220FIPOWERMOSFET ■TYPICALRDS(on)=0.050? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZA

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRF540FI

isc N-Channel Mosfet Transistor

DESCRITION Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. FEATURES ·LowRDS(on) ·VGSRatedat±20V ·SiliconGateforFastSwitchingSpeed ·Rugged ·LowDriveRequirements

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540I

N-ChannelPowerMOSFET(100V/27A)

GENERALDESCRIPTION ItusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge. Thisdeviceissuitableforhighcurrentloadapplications. FEATURE ●Highcurrentrating ●UltralowerRDS(on) ●GoodstabilityanduniformitywithhighEAS ●Excellentpack

FS

First Silicon Co., Ltd

IRF540N

33A,100V,0.040Ohm,N-ChannelPowerMOSFET

Features 1.UltraLowOn-Resistance -rDS(ON)=0.040?,VGS=10V 2.SimulationModels -TemperatureCompensatedPSPICE?andSABER?ElectricalModels -SpiceandSABER?ThermalImpedanceModels 3.PeakCurrentvsPulseWidthCurve 4.UISRatingCurve

Intersil

Intersil Corporation

IRF540N

PowerMOSFET(Vdss=100V,Rds(on)=44mohm,Id=33A)

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF540N

N-ChannelMosfetTransistor

?DESCRITION ?reliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.044? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperat

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF540N

AdvancedProcessTechnology

VDSS=100V RDS(on)=44m? ID=33A Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethrougho

KERSEMI

Kersemi Electronic Co., Ltd.

IRF540N

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRF540N

33A,100V,0.040Ohm,N-Channel,PowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.040Ω,VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER ElectricalModels -SpiceandSABER ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulseWidthCurve ?UISRatingCurve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

詳細參數(shù)

  • 型號：

    IRF540F

  • 功能描述：

    MOSFET REORD 511-IRF540

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    100 V

  • 閘/源擊穿電壓：

    +/- 20 V

  • 漏極連續(xù)電流：

    17 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.077 Ohms

  • 配置：

    Single

  • 最大工作溫度：

    + 175 C

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    TO-220

  • 封裝：

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價格
Harris
290
公司優(yōu)勢庫存 熱賣中!!
 詢價
IR
22+
TO-263
6000
終端可免費供樣,支持BOM配單
 詢價
IR
23+
TO-263
8000
只做原裝現(xiàn)貨
 詢價
IR
23+
TO-263
7000
詢價
ST
24+
TO-220F
5825
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
 詢價
IR
23+
TO-220F
5500
現(xiàn)貨,全新原裝
 詢價
IR
23+
TO-220F
9960
價格優(yōu)勢/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來電查詢
 詢價
VBSEMI/臺灣微碧
23+
TO-220F
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IR
21+
TO220F
10000
原裝現(xiàn)貨假一罰十
 詢價
IR
1922+
TO-220F
517
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
更多IRF540F供應(yīng)商 更新時間2025-6-26 9:38:00

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