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IRF3710

Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710

N-Channel Power MOSFET

NELLSEMINell Semiconductor Co., Ltd

尼爾半導體尼爾半導體股份有限公司

IRF3710

Advanced Process Technology

KERSEMI

Kersemi Electronic Co., Ltd.

IRF3710

N -Channel Power MOSFET (100V/59A)

FS

First Silicon Co., Ltd

IRF3710

isc N-Channel Mosfet Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF3710L

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710LPBF

HEXFET? Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710PBF

HEXFET Power MOSFET

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710S

Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A)

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF3710SPBF

HEXFET? Power MOSFET ( VDSS = 100V , RDS(on) = 23m廓 , ID = 57A )

VDSS=100V RDS(on)=23m? ID=57A Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRF3710

  • 制造商：

    International Rectifier

  • 功能描述：

    MOSFET N TO-220

供應(yīng)商型號品牌批號封裝庫存備注價格
IR
13+
TO-220/TO-263
50000
勤思達科技主營IR系列,全新原裝正品,公司現(xiàn)貨供應(yīng)。
 詢價
2015+
500
公司現(xiàn)貨庫存
 詢價
IR
2016+
TO220
3574
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價
IR
23+
TO-220
32078
10年以上分銷商,原裝進口件,服務(wù)型企業(yè)
 詢價
IR
24+
TO-220
18
只做原廠渠道 可追溯貨源
 詢價
IR
17+
TO-220AB
31518
原裝正品 可含稅交易
 詢價
IR(國際整流器)
2023+
N/A
4550
全新原裝正品
 詢價
IR
24+
TO 220
160908
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
 詢價
IR
05+
TO-220
18
深圳原裝進口現(xiàn)貨
 詢價
更多IRF3710供應(yīng)商 更新時間2025-6-23 11:04:00

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