IRF1010Z中文資料IRF數(shù)據手冊PDF規(guī)格書
IRF1010Z規(guī)格書詳情
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating tempera ture, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
產品屬性
- 型號:
IRF1010Z
- 功能描述:
MOSFET N-CH 55V 75A TO-220AB
- RoHS:
否
- 類別:
分離式半導體產品 >> FET - 單
- 系列:
HEXFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon(英飛凌) |
23+ |
NA |
7000 |
工廠現(xiàn)貨!原裝正品! |
詢價 | ||
IR |
20+ |
TO-220 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
IR |
0607 |
250 |
公司優(yōu)勢庫存 熱賣中! |
詢價 | |||
IR |
22+ |
TO-220 |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
INFINEON/英飛凌 |
2021+ |
45000 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | |||
IR |
25+23+ |
TO-263 |
27274 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IOR |
2020+ |
DIP |
18 |
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價 | ||
IR |
17+ |
TO-263 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IOR |
24+ |
TO-220 |
2987 |
絕對全新原裝現(xiàn)貨供應! |
詢價 | ||
IR |
22+ |
D2-PAK |
8000 |
原裝正品支持實單 |
詢價 |