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IRF1010N

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS=55V RDS(on)=11m? ID=85A? Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

IRF

International Rectifier

IRF1010N

N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF1010N

55V 單個(gè) N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封裝; \n優(yōu)勢(shì):\n? 符合 RoHS\n? 低 RDS(on)\n? 具有業(yè)內(nèi)先進(jìn)的品質(zhì)\n? 動(dòng)態(tài)的dv/dt額定值\n? 快速開關(guān)\n? 完全雪崩額定值\n? 175°C 的工作溫度\n;

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IRF1010NL

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NL

Fully Avalanche Rated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NLPBF

HEXFET? Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NPBF

HEXFET Power MOSFET

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRF

International Rectifier

IRF1010NPBF

Advanced Process Technology Ultra Low On-Resistance

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

KERSEMI

Kersemi Electronic Co., Ltd.

IRF1010NS

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description AdvancedHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRF

International Rectifier

IRF1010NS

Fully Avalanche Rated

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

技術(shù)參數(shù)

  • OPN：

    IRF1010NPBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    55 V

  • RDS (on) @10V max：

    11 m?

  • ID @25°C max：

    85 A

  • QG typ @10V：

    80 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V

  • VGS(th) max：

    4 V

  • VGS(th)：

    3 V

  • Technology：

    IR MOSFET?

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IR
TO-220
7510
專業(yè)分銷全系列產(chǎn)品!絕對(duì)原裝正品!量大可訂!價(jià)格優(yōu)
 詢價(jià)
IR
24+
TO-263
501249
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系
 詢價(jià)
IR
2024+
N/A
70000
柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
 詢價(jià)
IR
06+
TO-220
8000
自己公司全新庫存絕對(duì)有貨
 詢價(jià)
IR
2015+
SOP/DIP
19889
一級(jí)代理原裝現(xiàn)貨,特價(jià)熱賣!
 詢價(jià)
IR
24+
原廠封裝
5000
原裝現(xiàn)貨假一罰十
 詢價(jià)
IR
2015+
TO-220AB
12500
全新原裝,現(xiàn)貨庫存長(zhǎng)期供應(yīng)
 詢價(jià)
IR
2016+
TO220
1000
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
 詢價(jià)
BB
23+
8MSOP
8931
詢價(jià)
IR
17+
TO-220
6200
詢價(jià)
更多IRF1010N供應(yīng)商 更新時(shí)間2025-7-29 10:20:00

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