IPP60R080P7

Optimized power MOSFETs merging high energy efficiency with ease-of-use; Efficiency \n ? 600V P7 enables excellent FOM R DS(on)xE oss andR DS(on)xQ G\n Ease-of-use \n ? Integrated ESD diode from 180mN and above R DS(on)s\n? Integrated gate resistor R G\n? Rugged body diode\n? Wide portfolio in through hole and surface mount packages\n? Both standard grade and industrial grade parts are available\n\n優(yōu)勢(shì):\nEfficiency \n ? Excellent FOMs R DS(on)xQ G/R DS(on)xE oss enable higher efficiency\n Ease-of-use \n ? Ease-of-use in manufacturing environments by stopping ESD failures occurring\n? Integrated R G reduces MOSFET oscillation sensitivity\n? MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC\n? Excellent ruggedness during hard commutation of the body diode seen in LLC topology\n? Suitable for a wide variety of end applications and output powers\n? Parts available suitable for consumer and industrial applications\n;

The 600V CoolMOS? P7 is the successor to the 600V CoolMOS? P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS? 7th generation platform ensure its high efficiency.\n

IPP60R080P7

絲?。?a target="_blank" title="Marking" href="/60r080p7/marking.html">60R080P7；Package：PG-TO220-3；600V CoolMOS? P7 Power Transistor

IPP60R080P7

N-Channel MOSFET Transistor

IPW60R080P7

N-ChannelMOSFETTransistor

IPW60R080P7

600VCoolMOS?P7PowerTransistor

IPZA60R080P7

600VCoolMOS??P7PowerTransistor

600VCoolMOS?P7PowerTransistor Potentialapplications ??PFCstages,hardswitchingPWMstagesandresonantswitchingstages ??fore.g.PCSilverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom ??andUPS.