INA740B

采用 800μΩ EZShunt? 技術(shù)的 85V、16 位 I2C 輸出數(shù)字功率監(jiān)測器; ? Low loss integrated shunt resistor \n? Internal resistance: 800 μΩ, T A = 25°C\n? Continuous current: ±35 A, T A = 25°C\n? Peak measurement capability: ±39.32 A\n \n? Wide common-mode range: –0.1 V to +85 V\n? High-resolution, 16-bit delta-sigma ADC\n? Current monitoring accuracy: A/B Grade, maximum \n? Offset current: ±6.25 mA / ±62.5 mA\n? Offset drift: ±25 μA/°C (A and B Grades)\n? System gain error: ±0.75% / ±1.25%\n? System gain error drift: ±25 PPM/°C, typical\n? Common-mode rejection: ±0.125 / ±1.25 mA/V\n \n? Power monitoring accuracy: A/B Grade, maximum \n? ±0.85% / ±1.55% at 25°C, full scale\n \n? Energy and charge accuracy: A/B Grade, maximum \n? ±1.35% / ±2.05% at 25°C, full scale\n \n? Input bias current: 2.5 nA (maximum)\n? Temperature sensor: ±1.5°C (maximum at 25°C)\n? Programmable conversion time and averaging\n? 2.94-MHz high-speed I 2C interface with 16 pin-selectable addresses\n? Operates from a 2.7-V to 5.5-V supply: \n? Operational current: 640 μA (typical)\n? Shutdown current: 5 μA (maximum);

INA740x 是一款數(shù)字功率監(jiān)測器，具有集成式電流檢測元件以及專為電流檢測應(yīng)用而設(shè)計(jì)的 16 位 Δ-Σ ADC。該器件可以測量高達(dá) ±39.32A 的滿量程電流，共模電壓支持范圍為 -0.1V 至 +85V。\n\n INA740x 會報(bào)告電流、總線電壓、內(nèi)核溫度、功率、電能和電荷累積，并采用精度為 ±0.5% 的集成振蕩器，同時(shí)在后臺執(zhí)行所需的計(jì)算。集成式溫度傳感器在結(jié)溫范圍內(nèi)精度為 ±2.5°C。\n\n INA740x 采用低溫漂和增益漂移設(shè)計(jì)，以使此器件可用于在制造過程中不進(jìn)行多溫度校準(zhǔn)的精密系統(tǒng)。\n\n該器件允許選擇從 50μs 到 4.12ms 的 ADC 轉(zhuǎn)換時(shí)間以及從 1x 到 1024x 的采樣平均值，這有助于進(jìn)一步降低測量數(shù)據(jù)的噪聲。

INA740B

INA740x 85 V, 16-Bit, Precision I2C Output Digital Power Monitor with EZShunt? Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Widecommon-moderange:–0.1Vto+85V ?High-resolution,16-bitdelta-sigmaADC ?Currentmonitoringaccuracy:A/BGrad

INA740B

INA740x 85 V, 16-Bit, Precision I2C Output Digital Power Monitor with EZShunt? Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

INA740BIREMR

絲印：INA740B；Package：VQFN；INA740x 85 V, 16-Bit, Precision I2C Output Digital Power Monitor with EZShunt? Technology

1Features ?Lowlossintegratedshuntresistor –Internalresistance:800μΩ,TA=25°C –Continuouscurrent:±35A,TA=25°C –Peakmeasurementcapability:±39.32A ?Currentmonitoringaccuracy:A/BGrade, maximum –Offsetcurrent:±6.25mA/±62.5mA –Offsetdrift:±30μA/°C(AandB

INA818ID

TI
SOP-8