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零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
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650VSiCthinQ!??Generation5diodes Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VSiCthinQ!??Generation5diodes Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VSiCthinQ!??Generation5diodes Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
SiliconCarbideDiode | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
5thGenerationthinQ!TM650VSiCSchottkyDiode 1Description Features ?Revolutionarysemiconductormaterial-SiliconCarbide ?Benchmarkswitchingbehavior ?Noreverserecovery/Noforwardrecovery ?Temperatureindependentswitchingbehavior ?Highsurgecurrentcapability ?Pb-freeleadplating;RoHScompliant ?Qualifiedaccordin | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
650VSiCthinQ!??Generation5diodes Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
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