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IDH10G65C5

650VSiCthinQ!??Generation5diodes

Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDK10G65C5

650VSiCthinQ!??Generation5diodes

Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDL10G65C5

650VSiCthinQ!??Generation5diodes

Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDL10G65C5

SiliconCarbideDiode

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDW10G65C5

5thGenerationthinQ!TM650VSiCSchottkyDiode

1Description Features ?Revolutionarysemiconductormaterial-SiliconCarbide ?Benchmarkswitchingbehavior ?Noreverserecovery/Noforwardrecovery ?Temperatureindependentswitchingbehavior ?Highsurgecurrentcapability ?Pb-freeleadplating;RoHScompliant ?Qualifiedaccordin

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

IDW10G65C5

650VSiCthinQ!??Generation5diodes

Features ■V?at650V ImprovedFigureofMerit(QxV) ■Noreverserecoverycharge ■Softswitchingreverse recoverywaveform ■Temperatureindependent switchingbehavior Highoperatingtemperature (?175°C) ■Improvedsurgecapability ■Pb-freeleadplating ?10yearsmanufacturingof

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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