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IRF640FP

IRF640FP18A200VNCHANNELPOWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. FEATURES ?SiliconGateforFastSwitchingSpeeds ?LowRDS(on)toMinimizeOn-Losses.SpecifiedatElevatedTemperat

FCIFirst Components International

戈采戈采企業(yè)股份有限公司

IRF640L

PowerMOSFET(Vdss=200V,Rds(on)=0.18ohm,Id=18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. SurfaceMount(IRF640S) Low-profilethrough-hole(IRF640L) AvailableinTape&

IRF

International Rectifier

IRF640L

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640LPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationsoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAKisasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovidesthe

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF640N

PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A)

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRF

International Rectifier

IRF640N

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features ?UltraLowOn-Resistance -rDS(ON)=0.102?(Typ),VGS=10V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels ?PeakCurrentvsPulseWidthCurve ?UISRateingCurve

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF640N

HEXFETPowerMOSFET

IRF

International Rectifier

IRF640N

AdvancedProcessTechnology

IRF

International Rectifier

IRF640N

N-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IRF640N

N-ChannelMOSFETTransistor

?DESCRITION ?Efficientandreliabledeviceforuseinawidevarietyofapplications ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤150m? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

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36811
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