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IXFA7N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFA7N80P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXFA7N80P

PolarHiPerFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ●InternationalStandardPackages ●Dynamicdv/dtRating ●AvalancheRated ●FastIntrinsicRectifier ●LowQG Applications ●DC-DCConverters ●BatteryChargers ●Switch-ModeandResonant-ModePowerSupplies

IXYS

IXYS Corporation

IXFH7N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXFH7N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.4Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFI7N80P

PolarHVHiPerFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ●Internationalstandardpackages ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity

IXYS

IXYS Corporation

IXFI7N80P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM7N80

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance -easytodrive

IXYS

IXYS Corporation

IXFM7N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP7N80

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=7A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.44Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andPFCCircuits..

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
Hmsemi
TO-220F
22+
6000
十年配單,只做原裝
 詢價(jià)
Hmsemi
23+
TO-220F
6000
原裝正品，支持實(shí)單
 詢價(jià)
HMSEMI
23+
TO-220F
6800
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價(jià)
HMSEMI
20+
TO-220F
32500
現(xiàn)貨很近!原廠很遠(yuǎn)!只做原裝
 詢價(jià)
Hmsemi
25+
TO-TO-220F
12300
獨(dú)立分銷商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證
 詢價(jià)
BITECH
23+
NA
19960
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
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MTK
23+
SMD
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
MTK
18++
SMD
2000
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價(jià)
MTK
24+
NA/
400
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
 詢價(jià)
MTK
24+
SMD
60000
詢價(jià)
更多HM7N80D供應(yīng)商 更新時(shí)間2025-7-12 14:02:00

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