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HUF76129D3

20A,30V,0.016Ohm,N-Channel,LogicLevelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

Intersil

Intersil Corporation

HUF76129D3

20A,30V,0.016Ohm,N-Channel,LogicLevelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HUF76129D3S

N-channelAdvancedModePowerMOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

HUF76129D3S

20A,30V,0.016Ohm,N-Channel,LogicLevelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

Intersil

Intersil Corporation

HUF76129D3S

20A,30V,0.016Ohm,N-Channel,LogicLevelUltraFETPowerMOSFETs

TheseN-ChannelpowerMOSFETsaremanufacturedusingtheinnovativeUltraFET?process.Thisadvancedprocesstechnologyachievesthelowestpossibleon-resistancepersiliconarea,resultinginoutstandingperformance.Thisdeviceiscapableofwithstandinghighenergyintheavalanchemodeandth

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

HUF76129D3ST

N-channelAdvancedModePowerMOSFET

Features ?VDS=40V,ID=150A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

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