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IFBF512

N-ChannelJFET

Features ?InterFETN0026Geometry ?LowNoise:3nV/√HzTypical ?LowCiss:5.0pFMaximum ?LowLeakage:10pATypical ?RoHSCompliant ?SMT,TH,andBareDiePackageoptions. Applications ?LowNoiseHighGain ?ReplacementforBF512andBF513 ?Mixers ?Oscillators ?VHFAmplifier

InterFET

InterFET Corporation

IPS512G

FULLYPROTECTEDHIGHSIDEPOWERMOSFETSWITCH

Description TheIPS511G/IPS512Garefullyprotectedfiveterminalhighsideswitcheswithbuiltinshort-circuit,over-temperature,ESDprotection,inductiveloadcapabilityanddiagnosticfeedback.TheoutputcurrentiscontrolledwhenitreachesIlimvalue.Thecurrentlimitationisactivated

IRF

International Rectifier

IRF512

N-ChannelPowerMOSFETs,5.5A,60-100V

N-ChannelPowerMOSFETs,5.5A,60-100V

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

IRF512

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

N-ChannelEnhancement-ModeVerticalDMOSPowerFETs

SUTEX

Supertex, Inc

IRF512

4.9A,and5.6A,80Vand100V,0.54and0.74Ohm,N-ChannelPowerMOSFETs

Description TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplica

HARRIS

Harris Corporation

IRF512

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF512

N-ChannelPowerMosfets

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

IWD512

IWDSERIES-DUALOUTPUT,10WATT

POWER-ONE

Power-One

IWS512

IWSSERIES-10WATT

DESCRIPTION IWSDC/DCconvertersofferexcellentregulationandisolationinanindustry-standardpackage.Availableinseveralinputversions,theIWSisperfectforindustrial,datacom,ortelecomapplications.TheIWSfeaturesshortcircuitprotectionand500VDCisolation.PleaseseetheIWD

POWER-ONE

Power-One

KFCMY512

Duct-typefancoilforceilinginstallationwithmulti-zonecontrol

?Mainfeatures ?ControlofsinglezoneswithECactivation,0..10V ?ECcentrifugalfansfeaturinglowenergyconsumptions,withforward-curvedbladesforreducednoiselevel ?High-resistancegalvanizedmetalsheetstructurewithfree-standingframe,internalthermalandacousticinsulation

GIACOMINIGIACOMINI WATER E-MOTION

嘉科米尼

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MCT
23+
10000
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MICROCHIP
24+
sopdip
10800
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MICROCHIP
17+
sopdip
6200
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Mic
22+
DIP-14L
5000
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Microchip
23+
2017-MI
21500
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Microchip
24+
14DIP
10000
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MICROCIHIP
23+
DIP
30000
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Microchip Technology
24+
14-PDIP
38520
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Microchip
1940+
N/A
808
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MICROCHIP/微芯
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14-DIP
35200
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更多HCS512T-SLASHP供應(yīng)商 更新時(shí)間2025-6-23 11:10:00

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