HAF2026RJ

Silicon N Channel Power MOS FET Power Switching

This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumptio; ? Logic level operation (5 to 6 V Gate drive)\n? Built-in the over temperature shut-down circuit\n? High endurance capability against to the shut-down circuit\n? Latch type shut down operation (need 0 voltage recovery)\n? Built-in the current limitation circuit\n;

HAF2026RJ

Silicon N Channel Power MOS FET Power Switching

HAF2026RJ

Silicon N Channel Power MOSFET Power Switching

HAF2026RJ_10

Silicon N Channel Power MOS FET Power Switching

HAF2026RJ_15

Silicon N Channel Power MOS FET Power Switching

HAF2026RJ-EL-E

Silicon N Channel Power MOSFET Power Switching

HAF2026RJ-EL-E

Silicon N Channel Power MOS FET Power Switching

HAF2026RJ-EL-E

Package：8-SOIC（0.154"，3.90mm 寬）；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：集成電路（IC） 配電開關(guān)，負(fù)載驅(qū)動器 描述：ABU / MOSFET

Renesas Electronics America Inc