H11D3_V01中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Very high collector emitter breakdown voltage?

BVCEO = 300 V

? Isolation test voltage: 5000 VRMS

? Low coupling capacitance

? High common mode transient immunity

? Material categorization:?

for definitions of compliance please see

www.vishay.com/doc?99912

AGENCY APPROVALS

? UL1577

? cUL1577

? DIN EN 60747-5-5 (VDE 0884-5) available with option 1

APPLICATIONS

? Telecom

? Industrial controls

? Battery powered equipment

? Office machines

? Programmable controllers

DESCRIPTION

The H11Dx has a GaAs infrared emitting diode emitter,

which is optically coupled to a silicon planar phototransistor

detector, and is incorporated in a plastic DIP-6 package.

It features a high current transfer ratio, low coupling

capacitance, and high isolation voltage.

The coupling device is designed for signal transmission

between two electrically separated circuits.