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MDP11N60

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP11N60

N-Channel650V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司

MDP11N60TH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MDP11N60TH

N-ChannelMOSFET600V,11A,0.55(ohm)

MGCHIP

MagnaChip Semiconductor.

MGP11N60E

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MGP11N60E

InsulatedGateBipolarTransistor

InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MGP11N60ED

SHORTCIRCUITRATEDLOWON-VOLTAGE

InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

OM11N60

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

[Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat

etc2List of Unclassifed Manufacturers

etc未分類(lèi)制造商etc2未分類(lèi)制造商

OM11N60SA

POWERMOSFETINHERMETICISOLATED

DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They

IRF

International Rectifier

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
GOFORD(谷峰)
2447
TO-220F
105000
50個(gè)/管一級(jí)代理專(zhuān)營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期
 詢(xún)價(jià)
GOFORD(谷峰)
20+
TO-220F-3
50
詢(xún)價(jià)
24+
N/A
46000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
 詢(xún)價(jià)
GOFORD
2007202208
TO-252
2500
一級(jí)代理,專(zhuān)注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力
 詢(xún)價(jià)
NK/南科功率
2025+
TO-252
986966
國(guó)產(chǎn)
 詢(xún)價(jià)
23+
65480
詢(xún)價(jià)
ELECTROMED
24+
SMD
20000
一級(jí)代理原裝現(xiàn)貨假一罰十
 詢(xún)價(jià)
ELECTROMED
24+
SOP24
41
大批量供應(yīng)優(yōu)勢(shì)庫(kù)存熱賣(mài)
 詢(xún)價(jià)
N/A
23+
80000
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
N/A
23+
80000
專(zhuān)注配單,只做原裝進(jìn)口現(xiàn)貨
 詢(xún)價(jià)
更多GC11N60T供應(yīng)商 更新時(shí)間2025-6-22 15:01:00

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