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DTD113ZK

Marking：G21；Package：SOT-346；NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

VCC50V IC(MAX.)500mA R11k? R210k? Features 1)Built-InBiasingResistors 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnnercircuit). 3)Thebiasresistorsconsistofthin-filmresistorswith

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTD113ZU

Marking：G21；Package：SOT-323；NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

VCC50V IC(MAX.)500mA R11k? R210k? Features 1)Built-InBiasingResistors 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnnercircuit). 3)Thebiasresistorsconsistofthin-filmresistorswith

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTD113ZU

Marking：G21；Package：SOT-323；Digital transistors (built-in resistors)

VCC50V IC(MAX.)500mA R11k? R210k? Features 1)Built-InBiasingResistors 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnnercircuit). 3)Thebiasresistorsconsistofthin-filmresistorswith

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTD113ZU

Marking：G21；Package：SOT-323；500mA/50V Digital transistor

VCC50V IC(MAX.)500mA R11k? R210k? Features 1)Built-InBiasingResistors 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnnercircuit). 3)Thebiasresistorsconsistofthin-filmresistorswith

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

DTD113ZU

Marking：G21；Package：SOT-323；NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

VCC50V IC(MAX.)500mA R11k? R210k? Features 1)Built-InBiasingResistors 2)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeinnnercircuit). 3)Thebiasresistorsconsistofthin-filmresistorswith

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

G2003A

Marking：G2003A；Package：SOT-23-3L；Power switching application

Description TheG2003Ausesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitchingapplication

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G2009G

Marking：G2009G；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG2009Gusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200N06K

Marking：G200N06；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG200N06Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200N10K

Marking：G200N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description TheG200N10Kusesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

G200P04D3

Marking：G200P04；Package：DFN3X3-8L；P-Channel Enhancement Mode Power MOSFET

Description TheG200P04D3usesadvancedtrenchtechnologyto provideexcellentRDS(ON),lowgatecharge.Itcanbeusedin awidevarietyofapplications. Application lPowerswitch lDC/DCconverters

GOFORDGOFORD SEMICONDUCTOR

谷峰半導(dǎo)體

產(chǎn)品屬性

  • 產(chǎn)品編號：

    G2

  • 制造商：

    MACOM Technology Solutions

  • 類別：

    RF/IF，射頻/中頻和 RFID > 衰減器

  • 包裝：

    托盤

  • 衰減值：

    34dB

  • 封裝/外殼：

    TO-8 形式，4 引線

  • 描述：

    ATTENUATOR,VOLTAGE,CONTROLLED

供應(yīng)商型號品牌批號封裝庫存備注價格
10
優(yōu)勢庫存,全新原裝
 詢價
AOAGO
23+
SOT23-3
15000
全新原裝現(xiàn)貨,價格優(yōu)勢
 詢價
NEOWAY
23+
6000
原裝正品假一罰百!可開增票!
 詢價
TOSHIBA/東芝
23+
11
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
TOSHIBA/東芝
23+
11
6500
專注配單,只做原裝進(jìn)口現(xiàn)貨
 詢價
N/A
2402+
BGA
8324
原裝正品!實單價優(yōu)!
 詢價
GEMU
2447
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
XX
23+
SOT-23
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
XX
24+
NA/
6050
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票
 詢價
xx
25+
SOT-23
2800
原裝正品,假一罰十!
 詢價
更多G2供應(yīng)商 更新時間2025-6-23 10:00:00

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