首頁>FQB19N20C>規(guī)格書詳情

FQB19N20C中文資料仙童半導體數(shù)據(jù)手冊PDF規(guī)格書

FQB19N20C
廠商型號

FQB19N20C

功能描述

200V N-Channel MOSFET

文件大小

876.65 Kbytes

頁面數(shù)量

9

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

FAIRCHILD仙童半導體

中文名稱

飛兆/仙童半導體公司官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-7-7 23:00:00

人工找貨

FQB19N20C價格和庫存,歡迎聯(lián)系客服免費人工找貨

FQB19N20C規(guī)格書詳情

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Features

? 19.0A, 200V, RDS(on) = 0.17? @VGS = 10 V

? Low gate charge ( typical 40.5 nC)

? Low Crss ( typical 85 pF)

? Fast switching

? 100 avalanche tested

? Improved dv/dt capability

產(chǎn)品屬性

  • 型號:

    FQB19N20C

  • 功能描述:

    MOSFET 200V N-Channel Adv Q-FET C-Series

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應商 型號 品牌 批號 封裝 庫存 備注 價格
FAIRCHILD/仙童
24+
NA/
174
優(yōu)勢代理渠道,原裝正品,可全系列訂貨開增值稅票
詢價
onsemi(安森美)
24+
D2PAK
7350
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!!
詢價
F
24+
TO-263-
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
FAIRCHILD/仙童
22+
SOT-263
100000
代理渠道/只做原裝/可含稅
詢價
VB
25+
TO-263-D2PAK
10008
原裝正品,假一罰十!
詢價
FAIRCHILD
21+
TO263
10020
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
FAIRCHILD/仙童
24+
TO263
990000
明嘉萊只做原裝正品現(xiàn)貨
詢價
FAIRCHILD/仙童
21+
TO263
1709
詢價
FAIRCHILDONSEMICONDUCTOR
24+
NA
800
原裝現(xiàn)貨,專業(yè)配單專家
詢價
FAIRCHI
23+
TO-263
8650
受權代理!全新原裝現(xiàn)貨特價熱賣!
詢價