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IRF840

PowerMOSFET(VDSS=500V,RDS(on)=0.85ohm,ID=8.0A)

PowerMOSFET VDSS=500V,RDS(on)=0.85ohm,ID=8.0A NChannel

TELTokyo Electron Ltd.

東電電子東京電子有限公司

IRF840

TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET

Description Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycap

DCCOM

Dc Components

IRF840

POWERMOSFET

GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic

SUNTAC

Suntac Electronic Corp.

IRF840

iscN-ChannelMosfetTransistor

Designedforhighvoltage,highspeedswitchingpowerapplicationssuchasswitchingregulators,converters,solenoidandrelay FEATURES 1.DrainCurrent–ID=8.0A@TC=25℃ 2.DrainSourceVoltage-:VDSS=500V(Min) 3.StaticDrain-SourceOn-Resistance:RDS(on)=0.8

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRF840

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF840

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團

IRF840

N-CHANNELENHANCEMENTMODEPOWERMOSFET

Description TheTO-220andpackageisuniversallypreferredforallcommercial-industrialapplications.Thedeviceissuitedforswitchmodepowersupplies,DC-AC convertersandhighcurrenthighspeedswitchingcircuits.APECMOSFETprovidethepowerdesignerwiththebestcombinationoffasts

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

IRF840

A0.9-AConstantCurrentSupplywithPFCfor100-WLED

TI1Texas Instruments

德州儀器美國德州儀器公司

IRF840

N-ChannelPowerMOSFET

DESCRIPTION TheNellIRF840areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice

NELLSEMINell Semiconductor Co., Ltd

尼爾半導(dǎo)體尼爾半導(dǎo)體股份有限公司

IRF840

PowerMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    FM840-T

  • 制造商：

    FORMOSA

  • 制造商全稱：

    Formosa MS

  • 功能描述：

    Chip Schottky Barrier Diodes - Silicon epitaxial planer type

供應(yīng)商型號品牌批號封裝庫存備注價格
FORMOSA
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
WILLAS
24+
SMC
60000
全新原裝現(xiàn)貨
 詢價
WILLAS
24+
SMC
22500
鄭重承諾只做原裝進口現(xiàn)貨
 詢價
RECTRON
23+
SMCDO-214AB
7600
專注配單,只做原裝進口現(xiàn)貨
 詢價
RECTRON
23+
SMCDO-214AB
7600
專注配單,只做原裝進口現(xiàn)貨
 詢價
FM/富滿電子
23+
SOP-7
3000
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
 詢價
24+
N/A
57000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
FM(富滿)
23+
SOP-7
1494
LED驅(qū)動芯片/百分百原裝現(xiàn)貨
 詢價
FM(富滿)
2024+
SOP-7
500000
誠信服務(wù),絕對原裝原盤
 詢價
ST
25+
BGA16
16900
原裝，請咨詢
 詢價
更多FM840-T供應(yīng)商 更新時間2025-6-26 9:22:00

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