EMB1412MYSLASHNOPB.A中文資料德州儀器數(shù)據(jù)手冊PDF規(guī)格書

1 Features

1? Compound CMOS and Bipolar Outputs Reduce

Output Current Variation

? 7 A Sink/3 A Source Current

? Fast Propagation Times (25 ns Typical)

? Fast Rise and Fall Times (14 ns/12 ns Rise/Fall

with 2 nF Load)

? Inverting and Non-Inverting Inputs Provide Either

Configuration with a Single Device

? Supply Rail Under-Voltage Lockout Protection

? Dedicated Input Ground (IN_REF) for Split Supply

or Single Supply Operation

? Thermally Enhanced 8-Pin VSSOP Package

? Output Swings from VCC to VEE Which can be

Negative Relative to Input Ground

2 Applications

? Li-Ion Battery Management Systems

? Hybrid and Electric Vehicles

? Grid Storage

? 48 V Systems Supply

? UPS

3 Description

The EMB1412 MOSFET gate driver provides high

peak gate drive current in 8-lead exposed-pad

VSSOP package, with improved power dissipation

required for high frequency operation. The compound

output driver stage includes MOS and bipolar

transistors operating in parallel that together sink

more than 7-A peak from capacitive loads. Combining

the unique characteristics of MOS and bipolar

devices reduces drive current variation with voltage

and temperature. Under-voltage lockout protection is

provided to prevent damage to the MOSFET due to

insufficient gate turn-on voltage. The EMB1412

provides both inverting and non-inverting inputs to

satisfy requirements for inverting and non-inverting

gate drive with a single device type.