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H02N60SE

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SF

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SI

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

H02N60SJ

N-ChannelPowerFieldEffectTransistor

Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient

HSMCHi-Sincerity Mocroelectronics

華昕華昕科技有限公司

M02N60

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

M02N60B

NChannelMOSFET

FEATURE RobustHighVoltageTemination. AvalancheEnergySpecified Source-toDrainDiodeRecoveryTimeComparabletoaDiscreteFastRecoveryDiode DiodeisCharacterizedforUseinBridgeCircurits IDSSandVDS(on)SpecifiedatElevatedTemperature

STANSON

Stanson Technology

NDD02N60Z

N-ChannelPowerMOSFET600V,4.8

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NDD02N60Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.8Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

NDF02N60Z

N-ChannelPowerMOSFET600V,4.0

ONSEMION Semiconductor

安森美半導體安森美半導體公司

NDF02N60Z

N-ChannelPowerMOSFET

ONSEMION Semiconductor

安森美半導體安森美半導體公司

供應商型號品牌批號封裝庫存備注價格
EXCELLIANCE
17+
QFN
200
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
Displaytech
24+
SMD
17900
顯示開發(fā)工具
 詢價
Displaytech
2022+
原廠原包裝
6800
全新原裝 支持表配單 中國著名電子元器件獨立分銷
 詢價
EMC
23+
DFN5*6
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
EMC
24+
NA/
3290
原裝現(xiàn)貨,當天可交貨,原型號開票
 詢價
EMC/杰力
23+
EDFN5X6
360000
交期準時服務周到
 詢價
NK/南科功率
2025+
EDFN5*6
986966
國產(chǎn)
 詢價
EMC
SOP
7880
原盒原包裝現(xiàn)貨原裝假一罰十價優(yōu)
 詢價
E
TO-252
22+
6000
十年配單,只做原裝
 詢價
EMB
新年份
TO-252
33288
原裝正品現(xiàn)貨,實單帶TP來談!
 詢價
更多EMB02N60AB供應商 更新時間2025-6-23 18:31:00

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