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DS1330Y-100

1024kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

DS1330Y-100

4096kNonvolatileSRAMwithBatteryMonitor

DESCRIPTION TheDS13504096kNonvolatileSRAMsare4,194,304-bit,fullystatic,nonvolatileSRAMsorganizedas524,288wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuchacondit

DallasDallas Semiconductor

亞德諾亞德諾半導(dǎo)體

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