DRV8300-Q1中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書

1 Features

? AEC-Q100 qualified for automotive applications

– Temperature grade 1: –40°C ≤ TA ≤ 125°C

? 100-V Three Phase Half-Bridge Gate driver

– Drives N-Channel MOSFETs (NMOS)

– Gate Driver Supply (GVDD): 5-20 V

– MOSFET supply (SHx) support upto 100 V

? Integrated Bootstrap Diodes

? Bootstrap gate drive architecture

– 750-mA source current

– 1.5-A sink current

? Supports up to 48-V auto systems

? Low leakage current on SHx pins (<55 μA)

? Absolute maximum BSTx voltage upto 115-V

? Supports negative transients upto -22-V on SHx

? Built-in cross conduction prevention

? Fixed deadtime insertion of 215 ns

? Supports 3.3-V and 5-V logic inputs with 20 V Abs

max

? 4 nS typical propogation delay matching

? Compact TSSOP package

? Efficient system design with Power Blocks

? Integrated protection features

– BST undervoltage lockout (BSTUV)

– GVDD undervoltage (GVDDUV)