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IRFR9210

PowerMOSFET(Vdss=-200V,Rds(on)=3.0ohm,Id=-1.9A)

DESCRIPTION TheHEXFETtechnologyisthekeytoInternationalRectifiersadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingoftheHEXFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheD-

IRF

International Rectifier

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFET designachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDP

KERSEMI

Kersemi Electronic Co., Ltd.

IRFR9210

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Surface-mount(IRFR9210,SiHFR9210) ?Straightlead(IRFU9210,SiHFU9210) ?Availableintapeandreel ?P-channel ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技威世科技半導體

IRFR9210

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=-1.9A@TC=25℃ ·DrainSourceVoltage- :VDSS=-200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFR9210PBF

HEXFETPOWERMOSFET(VDSS=-200V,RDS(on)=3.0廓,ID=-1.9A)

IRF

International Rectifier

IRFR9210PBF

PowerMOSFET

DESCRIPTION ThePowerMOSFETstechnologyisthekeytoVishay’sadvancedlineofPowerMOSFETtransistors.TheefficientgeometryanduniqueprocessingofthePowerMOSFETdesignachieveverylowon-stateresistancecombinedwithhightransconductanceandextremedeviceruggedness. TheDPAK

VishayVishay Siliconix

威世科技威世科技半導體

產(chǎn)品屬性

  • 產(chǎn)品編號：

    DC-ME-9210-NET

  • 制造商：

    Digi

  • 類別：

    開發(fā)板，套件，編程器 > 評估板 - 嵌入式 - MCU，DSP

  • 系列：

    Digi Connect ME?

  • 包裝：

    盒

  • 板類型：

    評估平臺

  • 類型：

    MPU

  • 核心處理器：

    ARM9

  • 平臺：

    JumpStart

  • 使用的 IC/零件：

    Digi Connect? ME 9210 模塊

  • 安裝類型：

    固定

  • 內(nèi)含物：

    板，電纜，電源，配件

  • 描述：

    JUMPSTART DIGI CONN ME 9210 MOD

供應商型號品牌批號封裝庫存備注價格
Digi
22+
NA
2
加我QQ或微信咨詢更多詳細信息,
 詢價
DIGI
2004
Embedded Compute
1880
全新、原裝
 詢價
Digi International
24+
RJ45
53200
一級代理/放心采購
 詢價
DIGI
20+
IC
284
就找我吧!--邀您體驗愉快問購元件!
 詢價
24+
N/A
46000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
 詢價
DIGIINTERNATIONAL
25+23+
New
33001
絕對原裝正品現(xiàn)貨,全新深圳原裝進口現(xiàn)貨
 詢價
Digi International
2023+
75MHz
1976
安羅世紀電子只做原裝正品貨
 詢價
DIGI
23+
模塊
500
原裝正品,假一罰十
 詢價
DIGI
23+
DIP
35
原裝現(xiàn)貨假一賠十
 詢價
Digi International
24+
N/A
32000
全新原廠原裝正品現(xiàn)貨,低價出售,實單可談
 詢價
更多DC-ME-9210-NET供應商 更新時間2025-5-23 10:09:00

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