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PDTD123ES

Marking:D123ES;Package:SOT-54;NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

Generaldescription 500mANPNResistor-EquippedTransistors(RET)family. Features ■Built-inbiasresistors ■Reducescomponentcount ■Simplifiescircuitdesign ■Reducespickandplacecosts ■500mAoutputcurrentcapability ■±10resistorratiotolerance Applications ■Digital

PhilipsPhilips Semiconductors

飛利浦荷蘭皇家飛利浦

PDTD123ES

Marking:D123ES;Package:SC-43A;NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PDTD123YS

Marking:D123YS;Package:SC-43A;NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ

Features *Built-inbiasresistors *Simplifiescircuitdesign *500mAoutputcurrentcapability *Reducescomponentcount *Reducespickandplacecosts *±10resistorratiotolerance

NEXPERIANexperia B.V. All rights reserved

安世安世半導體(中國)有限公司

PJD12P06_L2_00001

Marking:D12P06;Package:TO-252AA;60V P-Channel Enhancement Mode MOSFET

Features ?RDS(ON),VGS@-10V,ID@-6A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJD12P06-AU_L2_000A1

Marking:D12P06;Package:TO-252AA;60V P-Channel Enhancement Mode MOSFET

Features ?RDS(ON),VGS@-10V,ID@-6A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

SD12C

Marking:D12C;Package:SOD-323;TVS ARRAY

350Wattspeakpulsepower(tp=8/20μs) Transientprotectionfordatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)24A(8/20μs) Smallpackageforuseinportableelectronics SuitablereplacementforMLV’sinESDprotect

SMCDIODESMC Diode Solutions Co. LTD

桑德斯微電子桑德斯微電子器件(南京)有限公司

SDT12S60

Marking:D12S60;Package:P-TO220-2-2;Silicon Carbide Schottky Diode

SiliconCarbideSchottkyDiode ?Worldsfirst600VSchottkydiode ?Revolutionarysemiconductor ??material-SiliconCarbide ?Switchingbehaviorbenchmark ?Noreverserecovery ?Notemperatureinfluenceon ??theswitchingbehavior ?Noforwardrecovery ?Pb-freeleadplating;RoHScom

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

STD12NF06LT4

Marking:D12NF06L;Package:DPAK;N-channel 60 V, 70 mΩ typ., 12 A, StripFET? II Power MOSFET in a DPAK package

Features Exceptionaldv/dtcapability 100avalanchetested Lowgatecharge Applications Switchingapplications Description ThisPowerMOSFETserieshasbeendevelopedusingSTMicroelectronics'unique STripFET?process,whichisspecificallydesignedtominimizeinputcapacitance andg

STMICROELECTRONICSSTMicroelectronics

意法半導體意法半導體集團

D12PS100L

Marking:D12SAL;Package:TO-277B;Schottky Barrier Rectifiers

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀微電子股份有限公司

D12PS60L

Marking:D12PS60L;Package:TO-277B;Schottky Barrier Rectifiers

BILINGalaxy Semi-Conductor Holdings Limited

銀河微電常州銀河世紀微電子股份有限公司

詳細參數(shù)

  • 型號:

    D12

  • 制造商:

    Distributed By MCM

  • 功能描述:

    DirecTV Standard Receiver D12

  • 制造商:

    Panasonic Industrial Company

  • 功能描述:

    MOTOR

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SONY
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絕對全新原裝!現(xiàn)貨!特價!請放心訂購!
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更多D12供應商 更新時間2025-6-26 9:51:00